DOI: 10.1063/1.93665. Thermal pulse annealing of boron-implanted HgCdTe

Thermal pulse annealing of boron-implanted HgCdTe

10.1063/1.93665

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Crystal damage, caused by a 1015 11B/cm2 250-keV implant into epitaxial Hg0.64Cd0.36Te layers held at LN2 temperature, has been successfully annealed, as observed by MeV 4He ion channeling and Rutherford backscattering. The anneal consists of a thermal pulse of 250 °C for 8 s in air under a Si proximity cap. Secondary ion mass spectrometry (SIMS) data indicate that the boron did not diffuse during the anneal. An n-p junction was observed at a depth of 5.5 μm by electron beam induced current (EBIC) measurements. A diode fabricated on the layer exhibited a very sharp I-V curve with reverse breakdown occurring at 12 V and an R0A of ⩾107 Ω cm2 at 77 K.

Bibliography

Conway, K. L., Opyd, W. G., Greiner, M. E., Gibbons, J. F., Sigmon, T. W., & Bubulac, L. O. (1982). Thermal pulse annealing of boron-implanted HgCdTe. Applied Physics Letters, 41(8), 750â752.

Authors 6

K. L. Conway (first)
W. G. Opyd (additional)
M. E. Greiner (additional)
J. F. Gibbons (additional)
T. W. Sigmon (additional)
L. O. Bubulac (additional)

References 11 Referenced 23

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10.1080/00337578008209261 / Radiat. Eff. (1980)
{'key': '2024020513102089200_r3'}
10.1063/1.92864 / Appl. Phys. Lett. (1981)
10.1063/1.330641 / J. Appl. Phys. (1982)
{'key': '2024020513102089200_r6', 'first-page': '58', 'volume': 'ED-27', 'year': '1980', 'journal-title': 'IEEE Trans. Electron. Devices'} / IEEE Trans. Electron. Devices (1980)
{'key': '2024020513102089200_r7'}
{'key': '2024020513102089200_r8'}
{'key': '2024020513102089200_r9', 'first-page': '10', 'volume': '19', 'year': '1980', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1980)
{'key': '2024020513102089200_r10'}
{'key': '2024020513102089200_r11', 'first-page': '274', 'volume': 'ED-29', 'year': '1982', 'journal-title': 'IEEE Trans. Electron. Devices'} / IEEE Trans. Electron. Devices (1982)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:25 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 8:29 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 11:44 a.m.)
Issued	42 years, 10 months ago (Oct. 15, 1982)
Published	42 years, 10 months ago (Oct. 15, 1982)
Published Print	42 years, 10 months ago (Oct. 15, 1982)

Funders 0

None

BibTeX

@article{Conway_1982, title={Thermal pulse annealing of boron-implanted HgCdTe}, volume={41}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.93665}, DOI={10.1063/1.93665}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Conway, K. L. and Opyd, W. G. and Greiner, M. E. and Gibbons, J. F. and Sigmon, T. W. and Bubulac, L. O.}, year={1982}, month=oct, pages={750–752} }

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