DOI: 10.1063/1.93610. Toward quantum well wires: Fabrication and optical properties

Toward quantum well wires: Fabrication and optical properties

10.1063/1.93610

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

As a first step toward the realization of a one-dimensional carrier confining structure in semiconductors, we have fabricated GaAs quantum well wires (QWW) with submicron dimensions using molecular beam epitaxy of GaAs and Ga1−xAlxAs. The structural quality and dimensions of the QWW have been assessed by transmission electron microscopy showing that single crystal, defect-free QWW, with dimensions as small as 200×200 Å in cross section can be achieved. The optical properties measured by low-temperature (T≳20°K) cathodoluminescence (CL) indicate a CL efficiency nearly as good as that of the quantum well material from which the QWW originated. A localization of the luminescence along the QWW axis is characteristic of QWW with sizes below a critical dimension (1.5 μm×200 Å cross section). This luminescence localization and a shift of the intrinsic luminescence to lower energy in QWW structures are tentatively assigned to strain effects in these structures.

Bibliography

Petroff, P. M., Gossard, A. C., Logan, R. A., & Wiegmann, W. (1982). Toward quantum well wires: Fabrication and optical properties. Applied Physics Letters, 41(7), 635â638.

Authors 4

P. M. Petroff (first)
A. C. Gossard (additional)
R. A. Logan (additional)
W. Wiegmann (additional)

References 10 Referenced 414

{'key': '2024020513111409800_r1'}
{'key': '2024020513111409800_r1a'}
10.1143/JPSJ.49.1013 / J. Phys. Soc. Jpn. (1980)
{'key': '2024020513111409800_r3', 'first-page': '219', 'volume': '37', 'year': '1981', 'journal-title': 'Solid State Commun.'} / Solid State Commun. (1981)
{'key': '2024020513111409800_r4', 'first-page': '12', 'volume': '19', 'year': '1980', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1980)
{'key': '2024020513111409800_r5'}
{'key': '2024020513111409800_r6', 'first-page': '1973', 'volume': '14', 'year': '1977', 'journal-title': 'J. Vac. Sci. Technol.'} / J. Vac. Sci. Technol. (1977)
{'key': '2024020513111409800_r7'}
10.1063/1.327598 / J. Appl. Phys. (1980)
{'key': '2024020513111409800_r9'}

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:25 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 8:29 a.m.)
Indexed	1 month, 4 weeks ago (June 25, 2025, 3:30 a.m.)
Issued	42 years, 10 months ago (Oct. 1, 1982)
Published	42 years, 10 months ago (Oct. 1, 1982)
Published Print	42 years, 10 months ago (Oct. 1, 1982)

Funders 0

None

BibTeX

@article{Petroff_1982, title={Toward quantum well wires: Fabrication and optical properties}, volume={41}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.93610}, DOI={10.1063/1.93610}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Petroff, P. M. and Gossard, A. C. and Logan, R. A. and Wiegmann, W.}, year={1982}, month=oct, pages={635–638} }

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