DOI: 10.1063/1.93508. Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth

Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth

10.1063/1.93508

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Single-crystal GaAs layers have been obtained by means of lateral epitaxial overgrowth seeded within stripe openings in a SiO2 mask over GaAs layers grown on Ge-coated Si substrates. Transmission electron microscope and scanning cathodoluminescence studies indicate that the laterally overgrown GaAs layers have a dislocation density of less than 104 cm−2, compared to 107–108 cm−2 for the GaAs layers grown directly on the Ge/Si substrates. Initial experiments indicate that the electrical properties of the laterally overgrown layers are comparable to those of conventional GaAs epilayers grown on single-crystal GaAs substrates.

Bibliography

Tsaur, B.-Y., McClelland, R. W., Fan, J. C. C., Gale, R. P., Salerno, J. P., Vojak, B. A., & Bozler, C. O. (1982). Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth. Applied Physics Letters, 41(4), 347â349.

Authors 7

B-Y. Tsaur (first)
R. W. McClelland (additional)
John C. C. Fan (additional)
R. P. Gale (additional)
J. P. Salerno (additional)
B. A. Vojak (additional)
C. O. Bozler (additional)

References 7 Referenced 59

10.1063/1.92160 / Appl. Phys. Lett. (1981)
{'key': '2024020513043963600_r2', 'first-page': '169', 'volume': 'EDL-2', 'year': '1981', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1981)
10.1063/1.90065 / Appl. Phys. Lett. (1978)
10.1063/1.90990 / Appl. Phys. Lett. (1979)
10.1063/1.91987 / Appl. Phys. Lett. (1980)
10.1116/1.571438 / J. Vac. Sci. Technol. (1982)
10.1063/1.1708984 / J. Appl. Phys. (1967)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:25 p.m.)
Deposited	1 year, 7 months ago (Feb. 5, 2024, 8:26 a.m.)
Indexed	1 year, 1 month ago (July 26, 2024, 11:56 a.m.)
Issued	43 years ago (Aug. 15, 1982)
Published	43 years ago (Aug. 15, 1982)
Published Print	43 years ago (Aug. 15, 1982)

Funders 0

None

BibTeX

@article{Tsaur_1982, title={Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth}, volume={41}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.93508}, DOI={10.1063/1.93508}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tsaur, B-Y. and McClelland, R. W. and Fan, John C. C. and Gale, R. P. and Salerno, J. P. and Vojak, B. A. and Bozler, C. O.}, year={1982}, month=aug, pages={347–349} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        7,
        26
      ]
    ],
    "date-time": "2024-07-26T15:56:05Z",
    "timestamp": 1722009365420
  },
  "reference-count": 7,
  "publisher": "AIP Publishing",
  "issue": "4",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1982,
        8,
        15
      ]
    ]
  },
  "abstract": "<jats:p>Single-crystal GaAs layers have been obtained by means of lateral epitaxial overgrowth seeded within stripe openings in a SiO2 mask over GaAs layers grown on Ge-coated Si substrates. Transmission electron microscope and scanning cathodoluminescence studies indicate that the laterally overgrown GaAs layers have a dislocation density of less than 104 cm\u22122, compared to 107\u2013108 cm\u22122 for the GaAs layers grown directly on the Ge/Si substrates. Initial experiments indicate that the electrical properties of the laterally overgrown layers are comparable to those of conventional GaAs epilayers grown on single-crystal GaAs substrates.</jats:p>",
  "DOI": "10.1063/1.93508",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2003,
        2,
        13
      ]
    ],
    "date-time": "2003-02-13T21:25:55Z",
    "timestamp": 1045171555000
  },
  "page": "347-349",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 59,
  "title": "Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth",
  "prefix": "10.1063",
  "volume": "41",
  "author": [
    {
      "given": "B-Y.",
      "family": "Tsaur",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173"
        }
      ]
    },
    {
      "given": "R. W.",
      "family": "McClelland",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173"
        }
      ]
    },
    {
      "given": "John C. C.",
      "family": "Fan",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173"
        }
      ]
    },
    {
      "given": "R. P.",
      "family": "Gale",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173"
        }
      ]
    },
    {
      "given": "J. P.",
      "family": "Salerno",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173"
        }
      ]
    },
    {
      "given": "B. A.",
      "family": "Vojak",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173"
        }
      ]
    },
    {
      "given": "C. O.",
      "family": "Bozler",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020513043963600_r1",
      "doi-asserted-by": "crossref",
      "first-page": "779",
      "DOI": "10.1063/1.92160",
      "volume": "38",
      "year": "1981",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020513043963600_r2",
      "first-page": "169",
      "volume": "EDL-2",
      "year": "1981",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2024020513043963600_r3",
      "doi-asserted-by": "crossref",
      "first-page": "390",
      "DOI": "10.1063/1.90065",
      "volume": "32",
      "year": "1978",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020513043963600_r4",
      "doi-asserted-by": "crossref",
      "first-page": "875",
      "DOI": "10.1063/1.90990",
      "volume": "35",
      "year": "1979",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020513043963600_r5",
      "doi-asserted-by": "crossref",
      "first-page": "560",
      "DOI": "10.1063/1.91987",
      "volume": "37",
      "year": "1980",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020513043963600_r6",
      "doi-asserted-by": "crossref",
      "first-page": "720",
      "DOI": "10.1116/1.571438",
      "volume": "20",
      "year": "1982",
      "journal-title": "J. Vac. Sci. Technol."
    },
    {
      "key": "2024020513043963600_r7",
      "doi-asserted-by": "crossref",
      "first-page": "375",
      "DOI": "10.1063/1.1708984",
      "volume": "38",
      "year": "1967",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/41/4/347/18446824/347_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/41/4/347/18446824/347_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T13:26:23Z",
    "timestamp": 1707139583000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/41/4/347/47790/Low-dislocation-density-GaAs-epilayers-grown-on-Ge"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1982,
        8,
        15
      ]
    ]
  },
  "references-count": 7,
  "journal-issue": {
    "issue": "4",
    "published-print": {
      "date-parts": [
        [
          1982,
          8,
          15
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.93508",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1982,
        8,
        15
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1982,
        8,
        15
      ]
    ]
  }
}