DOI: 10.1063/1.93415. Motion of deep gold-related centers in reverse-biased silicon junction diodes at room temperature

Motion of deep gold-related centers in reverse-biased silicon junction diodes at room temperature

10.1063/1.93415

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The room-temperature motion of gold-related centers in reverse-biased silicon n+p junction diodes has been observed using deep level transient spectroscopy. The concentration profile of the gold-related donor level (Ev +0.34 eV) is presented as a function of the duration of the electric field application. A mobility of 7.8±3.2×10−15 cm2 V−1 s−1 at 25 °C was obtained for this center. Under the same conditions, no movement was observed of the deep gold-related acceptor center (Ec −0.55 eV) in n-type silicon surface barrier diodes.

Bibliography

Pearton, S. J., & Tavendale, A. J. (1982). Motion of deep gold-related centers in reverse-biased silicon junction diodes at room temperature. Applied Physics Letters, 41(12), 1148â1150.

Authors 2

S. J. Pearton (first)
A. J. Tavendale (additional)

References 14 Referenced 7

10.1016/0038-1101(66)90085-2 / Solid State Electron. (1966)
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10.1063/1.1736065 / J. Appl. Phys. (1961)
10.1063/1.93452 / Appl. Phys. Lett. (1982)
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10.1063/1.1735561 / J. Appl. Phys. (1960)
10.1103/PhysRevB.14.3539 / Phys. Rev. B (1976)
10.1103/PhysRevB.22.3917 / Phys. Rev. B (1980)
{'key': '2024020513170813700_r11'}
10.1063/1.1663719 / J. Appl. Phys. (1974)
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Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:25 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 8:33 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 9:10 a.m.)
Issued	42 years, 8 months ago (Dec. 15, 1982)
Published	42 years, 8 months ago (Dec. 15, 1982)
Published Print	42 years, 8 months ago (Dec. 15, 1982)

Funders 0

None

BibTeX

@article{Pearton_1982, title={Motion of deep gold-related centers in reverse-biased silicon junction diodes at room temperature}, volume={41}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.93415}, DOI={10.1063/1.93415}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Pearton, S. J. and Tavendale, A. J.}, year={1982}, month=dec, pages={1148–1150} }

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