Crossref
journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract
Fe epitaxial films have been grown on GaAs(100) by thermal dissociation of Fe (CO)5 in a high vacuum environment. In situ low-energy electron diffraction (LEED) and Auger spectroscopy have been used to study the MOCVD process and to characterize the growing films. Excellent film quality is evidenced by the observed small ferromagnetic resonance linewidth.
References
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Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 13, 2003, 4:25 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 8:31 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 10, 2024, 8:49 a.m.) |
Issued | 42 years, 9 months ago (Nov. 15, 1982) |
Published | 42 years, 9 months ago (Nov. 15, 1982) |
Published Print | 42 years, 9 months ago (Nov. 15, 1982) |
@article{Kaplan_1982, title={Epitaxial growth of Fe on GaAs by metalorganic chemical vapor deposition in ultrahigh vacuum}, volume={41}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.93359}, DOI={10.1063/1.93359}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kaplan, R. and Bottka, N.}, year={1982}, month=nov, pages={972–974} }