Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Fe epitaxial films have been grown on GaAs(100) by thermal dissociation of Fe (CO)5 in a high vacuum environment. In situ low-energy electron diffraction (LEED) and Auger spectroscopy have been used to study the MOCVD process and to characterize the growing films. Excellent film quality is evidenced by the observed small ferromagnetic resonance linewidth.

Bibliography

Kaplan, R., & Bottka, N. (1982). Epitaxial growth of Fe on GaAs by metalorganic chemical vapor deposition in ultrahigh vacuum. Applied Physics Letters, 41(10), 972–974.

Authors 2
  1. R. Kaplan (first)
  2. N. Bottka (additional)
References 14 Referenced 36
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Dates
Type When
Created 22 years, 6 months ago (Feb. 13, 2003, 4:25 p.m.)
Deposited 1 year, 6 months ago (Feb. 5, 2024, 8:31 a.m.)
Indexed 1 year, 6 months ago (Feb. 10, 2024, 8:49 a.m.)
Issued 42 years, 9 months ago (Nov. 15, 1982)
Published 42 years, 9 months ago (Nov. 15, 1982)
Published Print 42 years, 9 months ago (Nov. 15, 1982)
Funders 0

None

@article{Kaplan_1982, title={Epitaxial growth of Fe on GaAs by metalorganic chemical vapor deposition in ultrahigh vacuum}, volume={41}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.93359}, DOI={10.1063/1.93359}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kaplan, R. and Bottka, N.}, year={1982}, month=nov, pages={972–974} }