DOI: 10.1063/1.93345. Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide

Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide

10.1063/1.93345

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Silicon-doped GaAs has been grown simultaneously on (100), (110), and (111)B oriented GaAs substrates by molecular beam epitaxy. For constant Si, Ga, and As4 fluxes the surface morphology of the (110) and (111)B faces degraded with increasing substrate temperature above ∼500 °C. (100) films had an n-type free-electron concentration of 5×1016 cm−3 independent of substrate temperature. Films on (110) substrates were p type when grown above ∼550 °C and n type below ∼550 °C whereas (111)B films were highly resisitive under most growth conditions. Low-temperature (4 K) photoluminescence showed good correlation between the Si acceptor peak heights and the compensation ratios derived from electrical measurements.

Bibliography

Ballingall, J. M., & Wood, C. E. C. (1982). Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide. Applied Physics Letters, 41(10), 947â949.

Authors 2

J. M. Ballingall (first)
C. E. C. Wood (additional)

References 17 Referenced 92

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10.1016/0022-0248(78)90453-0 / J. Cryst. Growth (1978)
10.1016/0039-6028(79)90387-X / Surf. Sci. (1979)
10.1063/1.92562 / Appl. Phys. Lett. (1981)
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Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:25 p.m.)
Deposited	1 year, 7 months ago (Feb. 5, 2024, 8:31 a.m.)
Indexed	1 year ago (Aug. 11, 2024, 12:32 p.m.)
Issued	42 years, 9 months ago (Nov. 15, 1982)
Published	42 years, 9 months ago (Nov. 15, 1982)
Published Print	42 years, 9 months ago (Nov. 15, 1982)

Funders 0

None

BibTeX

@article{Ballingall_1982, title={Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide}, volume={41}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.93345}, DOI={10.1063/1.93345}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ballingall, J. M. and Wood, C. E. C.}, year={1982}, month=nov, pages={947–949} }

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