DOI: 10.1063/1.93298. A new silicon-on-insulator structure using a silicon molecular beam epitaxial growth on porous silicon

A new silicon-on-insulator structure using a silicon molecular beam epitaxial growth on porous silicon

10.1063/1.93298

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A new silicon-on-insulator (SOI) structure has been achieved by utilizing silicon molecular beam epitaxial (Si-MBE) growth on porous silicon, silicon island patterning, and the subsequent laterally enhanced oxidation of the porous silicon. The surface of Si-MBE film grown on porous silicon at 770 °C without high-temperature preheating has a 7×7 superlattice structure when observed by a reflection high-energy electron diffraction (RHEED). Patterned Si-MBE film island, that is 7.0 μm wide and 0.35 μm thick, is successfully isolated by the laterally enhanced oxidation of porous silicon.

Bibliography

Konaka, S., Tabe, M., & Sakai, T. (1982). A new silicon-on-insulator structure using a silicon molecular beam epitaxial growth on porous silicon. Applied Physics Letters, 41(1), 86â88.

Authors 3

Shinsuke Konaka (first)
Michiharu Tabe (additional)
Tetsushi Sakai (additional)

References 6 Referenced 45

10.1002/j.1538-7305.1956.tb02385.x / Bell Syst. Tech. J. (1956)
10.1149/1.2428873 / J. Electrochem. Soc. (1958)
10.1149/1.2134015 / J. Electrochem. Soc. (1975)
10.1149/1.2133281 / J. Electrochem. Soc. (1977)
10.1149/1.2131674 / J. Electrochem. Soc. (1978)
10.1143/JJAP.20.703 / Jpn. J. Appl. Phys. (1981)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:25 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 8:23 a.m.)
Indexed	5 months, 1 week ago (March 22, 2025, 4:38 a.m.)
Issued	43 years, 1 month ago (July 1, 1982)
Published	43 years, 1 month ago (July 1, 1982)
Published Print	43 years, 1 month ago (July 1, 1982)

Funders 0

None

BibTeX

@article{Konaka_1982, title={A new silicon-on-insulator structure using a silicon molecular beam epitaxial growth on porous silicon}, volume={41}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.93298}, DOI={10.1063/1.93298}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Konaka, Shinsuke and Tabe, Michiharu and Sakai, Tetsushi}, year={1982}, month=jul, pages={86–88} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        3,
        22
      ]
    ],
    "date-time": "2025-03-22T08:38:59Z",
    "timestamp": 1742632739780
  },
  "reference-count": 6,
  "publisher": "AIP Publishing",
  "issue": "1",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1982,
        7,
        1
      ]
    ]
  },
  "abstract": "<jats:p>A new silicon-on-insulator (SOI) structure has been achieved by utilizing silicon molecular beam epitaxial (Si-MBE) growth on porous silicon, silicon island patterning, and the subsequent laterally enhanced oxidation of the porous silicon. The surface of Si-MBE film grown on porous silicon at 770\u2009\u00b0C without high-temperature preheating has a 7\u00d77 superlattice structure when observed by a reflection high-energy electron diffraction (RHEED). Patterned Si-MBE film island, that is 7.0 \u03bcm wide and 0.35 \u03bcm thick, is successfully isolated by the laterally enhanced oxidation of porous silicon.</jats:p>",
  "DOI": "10.1063/1.93298",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2003,
        2,
        13
      ]
    ],
    "date-time": "2003-02-13T21:25:55Z",
    "timestamp": 1045171555000
  },
  "page": "86-88",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 45,
  "title": "A new silicon-on-insulator structure using a silicon molecular beam epitaxial growth on porous silicon",
  "prefix": "10.1063",
  "volume": "41",
  "author": [
    {
      "given": "Shinsuke",
      "family": "Konaka",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino, Tokyo 180"
        }
      ]
    },
    {
      "given": "Michiharu",
      "family": "Tabe",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino, Tokyo 180"
        }
      ]
    },
    {
      "given": "Tetsushi",
      "family": "Sakai",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino, Tokyo 180"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020512594896500_r1",
      "doi-asserted-by": "crossref",
      "first-page": "333",
      "DOI": "10.1002/j.1538-7305.1956.tb02385.x",
      "volume": "35",
      "year": "1956",
      "journal-title": "Bell Syst. Tech. J."
    },
    {
      "key": "2024020512594896500_r2",
      "doi-asserted-by": "crossref",
      "first-page": "402",
      "DOI": "10.1149/1.2428873",
      "volume": "105",
      "year": "1958",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020512594896500_r3",
      "doi-asserted-by": "crossref",
      "first-page": "1351",
      "DOI": "10.1149/1.2134015",
      "volume": "122",
      "year": "1975",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020512594896500_r4",
      "doi-asserted-by": "crossref",
      "first-page": "285",
      "DOI": "10.1149/1.2133281",
      "volume": "124",
      "year": "1977",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020512594896500_r5",
      "doi-asserted-by": "crossref",
      "first-page": "1339",
      "DOI": "10.1149/1.2131674",
      "volume": "125",
      "year": "1978",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020512594896500_r6",
      "doi-asserted-by": "crossref",
      "first-page": "703",
      "DOI": "10.1143/JJAP.20.703",
      "volume": "20",
      "year": "1981",
      "journal-title": "Jpn. J. Appl. Phys."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/41/1/86/18446517/86_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/41/1/86/18446517/86_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T13:23:15Z",
    "timestamp": 1707139395000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/41/1/86/48106/A-new-silicon-on-insulator-structure-using-a"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1982,
        7,
        1
      ]
    ]
  },
  "references-count": 6,
  "journal-issue": {
    "issue": "1",
    "published-print": {
      "date-parts": [
        [
          1982,
          7,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.93298",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1982,
        7,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1982,
        7,
        1
      ]
    ]
  }
}