DOI: 10.1063/1.93243. Interface state generation in the Si-SiO2 system by photoinjecting electrons from an Al field plate

Interface state generation in the Si-SiO2 system by photoinjecting electrons from an Al field plate

10.1063/1.93243

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We observe the generation of interface states in the Si-SiO2 system when electrons are internally photoinjected from an Al field plate and are swept through the oxide by a moderate electric field. Interface states appear immediately at 90 K. The rate of interface state generation caused by photoinjected electrons depends on the oxide thickness and the magnitude of the bias field. The generated interface state density is found to increase as Nss = AQs, where Q is the injected charge and s is generally in the range 0.5–0.7. The generation does not saturate after passage of a total charge of 0.35 C/cm2.

Bibliography

Pang, S., Lyon, S. A., & Johnson, W. C. (1982). Interface state generation in the Si-SiO2 system by photoinjecting electrons from an Al field plate. Applied Physics Letters, 40(8), 709â711.

Authors 3

Stella Pang (first)
S. A. Lyon (additional)
Walter C. Johnson (additional)

References 17 Referenced 33

10.1063/1.1652955 / Appl. Phys. Lett. (1969)
10.1063/1.1659996 / J. Appl. Phys. (1971)
{'key': '2024020512524813600_r3', 'first-page': '871', 'volume': 'ED-17', 'year': '1970', 'journal-title': 'IEEE Trans. Electron. Devices'} / IEEE Trans. Electron. Devices (1970)
10.1063/1.1652996 / Appl. Phys. Lett. (1969)
10.1149/1.2132762 / J. Electrochem. Soc. (1976)
10.1063/1.325727 / J. Appl. Phys. (1979)
10.1149/1.2129615 / J. Electrochem. Soc. (1980)
10.1063/1.327612 / J. Appl. Phys. (1980)
{'key': '2024020512524813600_r9'}
{'key': '2024020512524813600_r10', 'first-page': '1644', 'volume': '36', 'year': '1967', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1967)
{'key': '2024020512524813600_r11'}
10.1063/1.91557 / Appl. Phys. Lett. (1980)
10.1016/0038-1101(62)90111-9 / Solid State Electron. (1962)
10.1016/0038-1101(70)90073-0 / Solid State Electron. (1970)
10.1063/1.326714 / J. Appl. Phys. (1979)
10.1063/1.1708831 / J. Appl. Phys. (1966)
10.1063/1.1754802 / Appl. Phys. Lett. (1967)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:19 p.m.)
Deposited	1 year, 7 months ago (Feb. 5, 2024, 8:16 a.m.)
Indexed	1 year, 7 months ago (Feb. 5, 2024, 11:20 a.m.)
Issued	43 years, 4 months ago (April 15, 1982)
Published	43 years, 4 months ago (April 15, 1982)
Published Print	43 years, 4 months ago (April 15, 1982)

Funders 0

None

BibTeX

@article{Pang_1982, title={Interface state generation in the Si-SiO2 system by photoinjecting electrons from an Al field plate}, volume={40}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.93243}, DOI={10.1063/1.93243}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Pang, Stella and Lyon, S. A. and Johnson, Walter C.}, year={1982}, month=apr, pages={709–711} }

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