DOI: 10.1063/1.93143. Picosecond InP optoelectronic switches

10.1063/1.93143

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Proton bombardment is used to increase the response speed of InP optoelectronic switches. Photoconductivity measurements indicate response times following bombardment of &lt;100 ps, with the electron mobility estimated to be ⩾600 cm2/Vs. This mobility is over an order of magnitude larger than that observed in similar high-resistivity devices of comparable speed fabricated in germanium or silicon-on-sapphire.

Bibliography

Foyt, A. G., Leonberger, F. J., & Williamson, R. C. (1982). Picosecond InP optoelectronic switches. Applied Physics Letters, 40(6), 447â449.

Authors 3

A. G. Foyt (first)
F. J. Leonberger (additional)
R. C. Williamson (additional)

References 13 Referenced 44

{'key': '2024020512493311900_r1', 'first-page': '109', 'volume': '269', 'year': '1981', 'journal-title': 'SPIE'} / SPIE (1981)
{'key': '2024020512493311900_r2', 'first-page': '58', 'volume': '272', 'year': '1981', 'journal-title': 'SPIE'} / SPIE (1981)
10.1049/ij-ssed.1978.0055 / Solid-State Electron. Devices (1978)
10.1063/1.91947 / Appl. Phys. Lett. (1980)
10.1063/1.91265 / Appl. Phys. Lett. (1979)
10.1063/1.92128 / Appl. Phys. Lett. (1981)
10.1063/1.92766 / Appl. Phys. Lett. (1981)
{'key': '2024020512493311900_r8', 'first-page': '208', 'volume': 'EDL-2', 'year': '1981', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1981)
{'key': '2024020512493311900_r9', 'first-page': '689', 'volume': '17', 'year': '1981', 'journal-title': 'Electron. Lett.'} / Electron. Lett. (1981)
10.1063/1.92114 / Appl. Phys. Lett. (1981)
{'key': '2024020512493311900_r11', 'first-page': '1214', 'volume': 'ED-28', 'year': '1981', 'journal-title': 'IEEE Trans. Electron. Devices'} / IEEE Trans. Electron. Devices (1981)
10.1016/0030-4018(80)90046-2 / Opt. Commun. (1980)
{'key': '2024020512493311900_r13', 'first-page': '830', 'volume': 'QE-17', 'year': '1981', 'journal-title': 'IEEE J. Quantum Electron.'} / IEEE J. Quantum Electron. (1981)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:19 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 8:08 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 11:43 a.m.)
Issued	43 years, 5 months ago (March 15, 1982)
Published	43 years, 5 months ago (March 15, 1982)
Published Print	43 years, 5 months ago (March 15, 1982)

Funders 0

None

BibTeX

@article{Foyt_1982, title={Picosecond InP optoelectronic switches}, volume={40}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.93143}, DOI={10.1063/1.93143}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Foyt, A. G. and Leonberger, F. J. and Williamson, R. C.}, year={1982}, month=mar, pages={447–449} }

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