DOI: 10.1063/1.93133. Critical volume fraction of crystallinity for conductivity percolation in phosphorus-doped Si:F:H alloys

Critical volume fraction of crystallinity for conductivity percolation in phosphorus-doped Si:F:H alloys

10.1063/1.93133

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have used Raman scattering to deduce the volume fraction of crystallinity for the highly phosphorus-doped glow-discharge Si:F:H alloys. The measured critical volume fraction at the onset of rapidly increased conduction in this two-phase system of microcrystallites embedded in an amorphous matrix is 0.18. This value coincides with the theoretical percolation limit and serves to explain the conduction process in these two-phase materials which are useful as contacts in amorphous solar cells.

Bibliography

Tsu, R., Gonzalez-Hernandez, J., Chao, S. S., Lee, S. C., & Tanaka, K. (1982). Critical volume fraction of crystallinity for conductivity percolation in phosphorus-doped Si:F:H alloys. Applied Physics Letters, 40(6), 534â535.

Authors 5

R. Tsu (first)
J. Gonzalez-Hernandez (additional)
S. S. Chao (additional)
S. C. Lee (additional)
K. Tanaka (additional)

References 9 Referenced 313

10.1016/0038-1098(80)90019-8 / Solid State Commun. (1980)
{'key': '2024020512502712600_r2'}
10.1063/1.1674565 / J. Chem. Phys. (1970)
10.1103/PhysRevB.16.3556 / Phys. Rev. B (1977)
{'key': '2024020512502712600_r5'}
{'key': '2024020512502712600_r6'}
10.1103/PhysRevLett.23.1167 / Phys. Rev. Lett. (1969)
{'key': '2024020512502712600_r8'}
{'key': '2024020512502712600_r9'}

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:19 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 8:10 a.m.)
Indexed	1 month, 4 weeks ago (July 2, 2025, 3:27 p.m.)
Issued	43 years, 5 months ago (March 15, 1982)
Published	43 years, 5 months ago (March 15, 1982)
Published Print	43 years, 5 months ago (March 15, 1982)

Funders 0

None

BibTeX

@article{Tsu_1982, title={Critical volume fraction of crystallinity for conductivity percolation in phosphorus-doped Si:F:H alloys}, volume={40}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.93133}, DOI={10.1063/1.93133}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tsu, R. and Gonzalez-Hernandez, J. and Chao, S. S. and Lee, S. C. and Tanaka, K.}, year={1982}, month=mar, pages={534–535} }

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