DOI: 10.1063/1.93128. Electron trapping in SiO2—An injection mode dependent phenomenon

Electron trapping in SiO2—An injection mode dependent phenomenon

10.1063/1.93128

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Electron trapping in metal-oxide-silicon structures and its dependence on the injected electron energy distribution and oxide field were studied. It is found that at high injection levels trapping efficiency and saturation level increase with the accelerating field in the Si, and decrease with increase in the oxide field. These results differ markedly from those obtained in low level injection, in which it is assumed that trapping is of electrons injected from the Si into the oxide conduction band. Based on the high level injection experimental results, it is proposed that significant electron trapping is obtained through direct tunneling of hot electrons with energy less than the potential barrier, into localized states in the oxide near the Si-SiO2 interface.

Bibliography

Eitan, B., Frohman-Bentchkowsky, D., Shappir, J., & Balog, M. (1982). Electron trapping in SiO2âAn injection mode dependent phenomenon. Applied Physics Letters, 40(6), 523â525.

Authors 4

B. Eitan (first)
D. Frohman-Bentchkowsky (additional)
J. Shappir (additional)
M. Balog (additional)

References 20 Referenced 21

10.1063/1.1659996 / J. Appl. Phys. (1971)
10.1063/1.1661066 / J. Appl. Phys. (1972)
10.1063/1.1663246 / J. Appl. Phys. (1974)
10.1149/1.2132762 / J. Electrochem. Soc. (1976)
10.1063/1.322706 / J. Appl. Phys. (1976)
10.1063/1.323116 / J. Appl. Phys. (1976)
10.1063/1.325368 / J. Appl. Phys. (1978)
10.1063/1.325727 / J. Appl. Phys. (1979)
10.1063/1.324568 / J. Appl. Phys. (1978)
10.1063/1.327716 / J. Appl. Phys. (1980)
{'key': '2024020512513369800_r11', 'first-page': '923', 'volume': 'ED-28', 'year': '1981', 'journal-title': 'IEEE Trans. Electron. Devices'} / IEEE Trans. Electron. Devices (1981)
10.1063/1.329259 / J. Appl. Phys. (1981)
10.1063/1.88138 / Appl. Phys. Lett. (1975)
{'key': '2024020512513369800_r14'}
10.1063/1.327612 / J. Appl. Phys. (1980)
10.1063/1.1659364 / J. Appl. Phys. (1970)
10.1063/1.1662633 / J. Appl. Phys. (1973)
10.1063/1.1659784 / J. Appl. Phys. (1971)
10.1016/0038-1101(73)90169-X / Solid-State Electron (1973)
10.1103/PhysRev.119.1502 / Phys. Rev. (1960)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:19 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 8:13 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 9:23 a.m.)
Issued	43 years, 5 months ago (March 15, 1982)
Published	43 years, 5 months ago (March 15, 1982)
Published Print	43 years, 5 months ago (March 15, 1982)

Funders 0

None

BibTeX

@article{Eitan_1982, title={Electron trapping in SiO2—An injection mode dependent phenomenon}, volume={40}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.93128}, DOI={10.1063/1.93128}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Eitan, B. and Frohman-Bentchkowsky, D. and Shappir, J. and Balog, M.}, year={1982}, month=mar, pages={523–525} }

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