DOI: 10.1063/1.93121. Photocurrent onset potential and flatband potential of a <i>p</i>-type GaP semiconducting photoelectrode

Photocurrent onset potential and flatband potential of a p-type GaP semiconducting photoelectrode

10.1063/1.93121

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A discrepancy between the photocurrent onset potential and the flatband potential derived from capacitance voltage measurements has been observed on p-type GaP semiconducting photoelectrodes. This discrepancy has been attributed previously by Butler and Ginley to a localized state acting as a recombination center. It is demonstrated that the experimental current-voltage characteristic can be fitted to a curve calculated from a theoretical model that takes into account the rate limitation due to the charge transfer across the semiconductor-electrolyte interface, and the recombinations in the space-charge layer. The very low electron and hole transfer currents across the interface are attributed to the weak overlap between semiconductor bands and redox ion state densities.

Bibliography

Horowitz, G. (1982). Photocurrent onset potential and flatband potential of a p-type GaP semiconducting photoelectrode. Applied Physics Letters, 40(5), 409â411.

Authors 1

G. Horowitz (first)

References 18 Referenced 14

10.1016/0022-0248(77)90166-X / J. Cryst. Growth (1977)
10.1051/rphysap:01980001503046300 / Rev. Phys. Appl. (Paris) (1980)
{'key': '2024020512500086700_r3'}
10.1149/1.2132667 / J. Electrochem. Soc. (1976)
{'key': '2024020512500086700_r5'}
10.1149/1.2129870 / J. Electrochem. Soc. (1980)
10.1149/1.2127489 / J. Electrochem. Soc. (1981)
10.1063/1.323417 / J. Appl. Phys. (1977)
10.1063/1.91551 / Appl. Phys. Lett. (1980)
{'key': '2024020512500086700_r10', 'first-page': '86', 'volume': '116', 'year': '1959', 'journal-title': 'Phys. Rev.'} / Phys. Rev. (1959)
10.1063/1.325217 / J. Appl. Phys. (1978)
{'key': '2024020512500086700_r12'}
10.1016/0022-3697(66)90240-X / J. Phys. Chem. Solids (1966)
10.1063/1.1728804 / J. Appl. Phys. (1962)
10.1109/JRPROC.1957.278528 / Proc. IRE (1957)
{'key': '2024020512500086700_r16', 'first-page': '137', 'volume': '134', 'year': '1931', 'journal-title': 'Proc. Roy. Soc. A'} / Proc. Roy. Soc. A (1931)
{'key': '2024020512500086700_r17'}
10.1002/bbpc.19740781016 / Ber. Bunsenges. Phys. Chem. (1974)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:19 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 8:09 a.m.)
Indexed	4 months, 3 weeks ago (April 10, 2025, 8:12 a.m.)
Issued	43 years, 6 months ago (March 1, 1982)
Published	43 years, 6 months ago (March 1, 1982)
Published Print	43 years, 6 months ago (March 1, 1982)

Funders 0

None

BibTeX

@article{Horowitz_1982, title={Photocurrent onset potential and flatband potential of a p-type GaP semiconducting photoelectrode}, volume={40}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.93121}, DOI={10.1063/1.93121}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Horowitz, G.}, year={1982}, month=mar, pages={409–411} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        4,
        10
      ]
    ],
    "date-time": "2025-04-10T12:12:55Z",
    "timestamp": 1744287175585
  },
  "reference-count": 18,
  "publisher": "AIP Publishing",
  "issue": "5",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1982,
        3,
        1
      ]
    ]
  },
  "abstract": "<jats:p>A discrepancy between the photocurrent onset potential and the flatband potential derived from capacitance voltage measurements has been observed on p-type GaP semiconducting photoelectrodes. This discrepancy has been attributed previously by Butler and Ginley to a localized state acting as a recombination center. It is demonstrated that the experimental current-voltage characteristic can be fitted to a curve calculated from a theoretical model that takes into account the rate limitation due to the charge transfer across the semiconductor-electrolyte interface, and the recombinations in the space-charge layer. The very low electron and hole transfer currents across the interface are attributed to the weak overlap between semiconductor bands and redox ion state densities.</jats:p>",
  "DOI": "10.1063/1.93121",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2003,
        2,
        13
      ]
    ],
    "date-time": "2003-02-13T21:19:08Z",
    "timestamp": 1045171148000
  },
  "page": "409-411",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 14,
  "title": "Photocurrent onset potential and flatband potential of a <i>p</i>-type GaP semiconducting photoelectrode",
  "prefix": "10.1063",
  "volume": "40",
  "author": [
    {
      "given": "G.",
      "family": "Horowitz",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Service d\u2019Etudes Energ\u00e9tiques/DEMT, Cen-Saclay, 91191 Gif/Yvette Cedex, France"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020512500086700_r1",
      "doi-asserted-by": "crossref",
      "first-page": "200",
      "DOI": "10.1016/0022-0248(77)90166-X",
      "volume": "39",
      "year": "1977",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020512500086700_r2",
      "doi-asserted-by": "crossref",
      "first-page": "463",
      "DOI": "10.1051/rphysap:01980001503046300",
      "volume": "15",
      "year": "1980",
      "journal-title": "Rev. Phys. Appl. (Paris)"
    },
    {
      "key": "2024020512500086700_r3"
    },
    {
      "key": "2024020512500086700_r4",
      "doi-asserted-by": "crossref",
      "first-page": "1683",
      "DOI": "10.1149/1.2132667",
      "volume": "123",
      "year": "1976",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020512500086700_r5"
    },
    {
      "key": "2024020512500086700_r6",
      "doi-asserted-by": "crossref",
      "first-page": "1273",
      "DOI": "10.1149/1.2129870",
      "volume": "127",
      "year": "1980",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020512500086700_r7",
      "doi-asserted-by": "crossref",
      "first-page": "712",
      "DOI": "10.1149/1.2127489",
      "volume": "128",
      "year": "1981",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020512500086700_r8",
      "doi-asserted-by": "crossref",
      "first-page": "4292",
      "DOI": "10.1063/1.323417",
      "volume": "48",
      "year": "1977",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020512500086700_r9",
      "doi-asserted-by": "crossref",
      "first-page": "574",
      "DOI": "10.1063/1.91551",
      "volume": "36",
      "year": "1980",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020512500086700_r10",
      "first-page": "86",
      "volume": "116",
      "year": "1959",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020512500086700_r11",
      "doi-asserted-by": "crossref",
      "first-page": "3571",
      "DOI": "10.1063/1.325217",
      "volume": "49",
      "year": "1978",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020512500086700_r12"
    },
    {
      "key": "2024020512500086700_r13",
      "doi-asserted-by": "crossref",
      "first-page": "1611",
      "DOI": "10.1016/0022-3697(66)90240-X",
      "volume": "27",
      "year": "1966",
      "journal-title": "J. Phys. Chem. Solids"
    },
    {
      "key": "2024020512500086700_r14",
      "doi-asserted-by": "crossref",
      "first-page": "1649",
      "DOI": "10.1063/1.1728804",
      "volume": "33",
      "year": "1962",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020512500086700_r15",
      "doi-asserted-by": "crossref",
      "first-page": "1228",
      "DOI": "10.1109/JRPROC.1957.278528",
      "volume": "45",
      "year": "1957",
      "journal-title": "Proc. IRE"
    },
    {
      "key": "2024020512500086700_r16",
      "first-page": "137",
      "volume": "134",
      "year": "1931",
      "journal-title": "Proc. Roy. Soc. A"
    },
    {
      "key": "2024020512500086700_r17"
    },
    {
      "key": "2024020512500086700_r18",
      "doi-asserted-by": "crossref",
      "first-page": "1078",
      "DOI": "10.1002/bbpc.19740781016",
      "volume": "78",
      "year": "1974",
      "journal-title": "Ber. Bunsenges. Phys. Chem."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/40/5/409/18445735/409_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/40/5/409/18445735/409_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T13:09:29Z",
    "timestamp": 1707138569000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/40/5/409/47597/Photocurrent-onset-potential-and-flatband"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1982,
        3,
        1
      ]
    ]
  },
  "references-count": 18,
  "journal-issue": {
    "issue": "5",
    "published-print": {
      "date-parts": [
        [
          1982,
          3,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.93121",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1982,
        3,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1982,
        3,
        1
      ]
    ]
  }
}