DOI: 10.1063/1.92934. Deuterium passivation of grain-boundary dangling bonds in silicon thin films

Deuterium passivation of grain-boundary dangling bonds in silicon thin films

10.1063/1.92934

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Hydrogen passivation of silicon grain boundaries has been investigated by using deuterium as a readily identifiable isotope which duplicates hydrogen chemistry. Deuterium detection with high sensitivity was achieved with secondary-ion mass spectrometry. Diffusion of deuterium in single- crystal silicon and polycrystalline silicon thin films at low temperatures (e.g., 350 °C) clearly demonstrates enhanced diffusion along grain boundaries. Defects at grain boundaries were detected by electron-spin resonance and identified as silicon-dangling bonds. Deuterium passivation of grain boundaries is revealed by correlated deuterium diffusion and dangling-bond annihilation in polycrystalline silicon films.

Bibliography

Johnson, N. M., Biegelsen, D. K., & Moyer, M. D. (1982). Deuterium passivation of grain-boundary dangling bonds in silicon thin films. Applied Physics Letters, 40(10), 882â884.

Authors 3

N. M. Johnson (first)
D. K. Biegelsen (additional)
M. D. Moyer (additional)

References 15 Referenced 219

10.1063/1.90779 / Appl. Phys. Lett. (1979)
{'key': '2024020512564403500_r2', 'first-page': '159', 'volume': 'EDL-1', 'year': '1980', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1980)
{'key': '2024020512564403500_r3'}
10.1063/1.92225 / Appl. Phys. Lett. (1981)
10.1116/1.571070 / J. Vac. Sci. Technol. (1981)
10.1063/1.92817 / Appl. Phys. Lett. (1981)
10.1149/1.2131593 / J. Electrochem. Soc. (1978)
10.1149/1.2129733 / J. Electrochem. Soc. (1980)
10.1063/1.90546 / Appl. Phys. Lett. (1978)
{'key': '2024020512564403500_r10', 'first-page': '849', 'volume': '22', 'year': '1956', 'journal-title': 'Physics'} / Physics (1956)
{'key': '2024020512564403500_r11'}
10.1103/PhysRevLett.23.581 / Phys. Rev. Lett. (1969)
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Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:19 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 8:20 a.m.)
Indexed	5 days, 18 hours ago (Aug. 20, 2025, 9:05 a.m.)
Issued	43 years, 3 months ago (May 15, 1982)
Published	43 years, 3 months ago (May 15, 1982)
Published Print	43 years, 3 months ago (May 15, 1982)

Funders 0

None

BibTeX

@article{Johnson_1982, title={Deuterium passivation of grain-boundary dangling bonds in silicon thin films}, volume={40}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.92934}, DOI={10.1063/1.92934}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Johnson, N. M. and Biegelsen, D. K. and Moyer, M. D.}, year={1982}, month=may, pages={882–884} }

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