DOI: 10.1063/1.92932. Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor deposition

Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor deposition

10.1063/1.92932

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report, from Shubnikov-de Haas and cyclotron resonance experiments, the first observation of a two-dimensional, high-mobility electron gas in a selectively doped In0.53Ga0.47 As-InP heterojunction grown by metalorganic chemical vapor deposition. Several parameters of the electronic system under consideration are determined.

Bibliography

Guldner, Y., Vieren, J. P., Voisin, P., Voos, M., Razeghi, M., & Poisson, M. A. (1982). Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor deposition. Applied Physics Letters, 40(10), 877â879.

Authors 6

Y. Guldner (first)
J. P. Vieren (additional)
P. Voisin (additional)
M. Voos (additional)
M. Razeghi (additional)
M. A. Poisson (additional)

References 17 Referenced 96

10.1016/0038-1098(79)91010-X / Solid State Commun. (1979)
10.1049/el:19810090 / Electron. Lett. (1981)
{'key': '2024020512573727800_r2a', 'first-page': '914', 'volume': '39', 'year': '1981', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1981)
10.1143/JJAP.20.L455 / Jpn. J. Appl. Phys. (1981)
10.1049/el:19810426 / Electron. Lett. (1981)
10.1143/JJAP.20.L598 / Jpn. J. Appl. Phys. (1981)
{'key': '2024020512573727800_r3a'}
10.1049/el:19800290 / Electron. Lett. (1980)
10.1049/el:19810451 / Electron. Lett. (1981)
10.1063/1.92824 / Appl. Phys. Lett. (1981)
10.1063/1.92408 / Appl. Phys. Lett. (1981)
10.1103/PhysRev.163.816 / Phys. Rev. (1967)
10.1063/1.91815 / Appl. Phys. Lett. (1980)
{'key': '2024020512573727800_r9', 'first-page': '4891', 'volume': '12', 'year': '1972', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1972)
{'key': '2024020512573727800_r10'}
10.1063/1.92634 / Appl. Phys. Lett. (1981)
{'key': '2024020512573727800_r12'}

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:19 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 8:21 a.m.)
Indexed	1 year, 6 months ago (Feb. 6, 2024, 8:01 p.m.)
Issued	43 years, 3 months ago (May 15, 1982)
Published	43 years, 3 months ago (May 15, 1982)
Published Print	43 years, 3 months ago (May 15, 1982)

Funders 0

None

BibTeX

@article{Guldner_1982, title={Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor deposition}, volume={40}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.92932}, DOI={10.1063/1.92932}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Guldner, Y. and Vieren, J. P. and Voisin, P. and Voos, M. and Razeghi, M. and Poisson, M. A.}, year={1982}, month=may, pages={877–879} }

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