DOI: 10.1063/1.92672. Selective niobium anodization process for fabricating Josephson tunnel junctions

Selective niobium anodization process for fabricating Josephson tunnel junctions

10.1063/1.92672

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A novel process for fabricating refractory sperconducting tunnel junctions is described, which is useful with both deposited and native oxide barriers. The distinguishing feature of the method is that the entire superconductor-barrier-superconductor sandwich is formed before the patterning of any layer. Isolated Josephson junctions are then formed by anodizing through the upper electrode, while the devices themselves are protected by a photoresist mask. Using this process, Nb-Si:H-Nb junctions have been fabricated, whose product of critical current and subgap resistance exceeds 10 mV and whose critical current density varies by about 50% over a 2-in. diameter wafer.

Bibliography

Kroger, H., Smith, L. N., & Jillie, D. W. (1981). Selective niobium anodization process for fabricating Josephson tunnel junctions. Applied Physics Letters, 39(3), 280â282.

Authors 3

H. Kroger (first)
L. N. Smith (additional)
D. W. Jillie (additional)

References 11 Referenced 285

{'key': '2024020512284055700_r1', 'first-page': '420', 'volume': 'MAG-15', 'year': '1979', 'journal-title': 'IEEE Trans. Magn.'} / IEEE Trans. Magn. (1979)
{'key': '2024020512284055700_r2'}
10.1116/1.1492542 / J. Vac. Sci. Technol. (1967)
{'key': '2024020512284055700_r4', 'first-page': '488', 'volume': 'MAG-15', 'year': '1979', 'journal-title': 'IEEE Trans. Magn.'} / IEEE Trans. Magn. (1979)
{'key': '2024020512284055700_r5', 'first-page': '2016', 'volume': 'ED-27', 'year': '1980', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1980)
10.1147/rd.242.0212 / IBM J. Res. Dev. (1980)
10.1063/1.89690 / Appl. Phys. Lett. (1977)
10.1116/1.569443 / J. Vac. Sci. Technol. (1978)
10.1063/1.91407 / Appl. Phys. Lett. (1980)
{'key': '2024020512284055700_r10', 'first-page': '2030', 'volume': 'ED-27', 'year': '1980', 'journal-title': 'IEEE Trans. Electron. Devices'} / IEEE Trans. Electron. Devices (1980)
{'key': '2024020512284055700_r11', 'first-page': '118', 'volume': '25', 'year': '1970', 'journal-title': 'Philips Res. Rep.'} / Philips Res. Rep. (1970)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:12 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 7:52 a.m.)
Indexed	4 months ago (April 21, 2025, 12:43 a.m.)
Issued	44 years ago (Aug. 1, 1981)
Published	44 years ago (Aug. 1, 1981)
Published Print	44 years ago (Aug. 1, 1981)

Funders 0

None

BibTeX

@article{Kroger_1981, title={Selective niobium anodization process for fabricating Josephson tunnel junctions}, volume={39}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.92672}, DOI={10.1063/1.92672}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kroger, H. and Smith, L. N. and Jillie, D. W.}, year={1981}, month=aug, pages={280–282} }

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