DOI: 10.1063/1.92237. Luminescence properties of GaAs-Ga1−<i>x</i> Al<i>x</i> As double heterostructures and multiquantum-well superlattices grown by molecular beam epitaxy

Luminescence properties of GaAs-Ga1−x Alx As double heterostructures and multiquantum-well superlattices grown by molecular beam epitaxy

10.1063/1.92237

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Undoped double-heterostructures (DH) and multiquantum-well structures (MQW) grown by molecular beam epitaxy are studied by cathodoluminescence and photoluminescence. Their structural properties are established by scanning transmission electron microscopy. In DH discrete nonradiative centers are observed with densities ∼104–105 cm−2; some of them are correlated with dislocations originating in the substrate. In sharp contrast, MQW show a very uniform luminescence with no nonradiative action at dislocations. These results might explain in part the higher quantum efficiency of MQW grown by molecular beam epitaxy.

Bibliography

Petroff, P. M., Weisbuch, C., Dingle, R., Gossard, A. C., & Wiegmann, W. (1981). Luminescence properties of GaAs-Ga1âx Alx As double heterostructures and multiquantum-well superlattices grown by molecular beam epitaxy. Applied Physics Letters, 38(12), 965â968.

Authors 5

P. M. Petroff (first)
C. Weisbuch (additional)
R. Dingle (additional)
A. C. Gossard (additional)
W. Wiegmann (additional)

References 14 Referenced 60

10.1088/0022-3719/5/13/020 / J. Phys. C (1972)
10.1016/0022-3697(75)90043-8 / J. Phys. Chem. Solids (1975)
{'key': '2024020512261085300_r3', 'volume': '7', 'year': '1973', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1973)
{'key': '2024020512261085300_r4'}
{'key': '2024020512261085300_r5'}
{'key': '2024020512261085300_r6', 'volume': '39', 'year': '1981', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1981)
10.1063/1.91927 / Appl. Phys. Lett. (1980)
{'key': '2024020512261085300_r8'}
{'key': '2024020512261085300_r9'}
10.1063/1.327598 / J. Appl. Phys. (1980)
{'key': '2024020512261085300_r11'}
10.1103/PhysRevB.17.4775 / Phys. Rev. B (1978)
10.1063/1.327844 / J. Appl. Phys. (1980)
{'key': '2024020512261085300_r14'}

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:05 p.m.)
Deposited	1 year, 7 months ago (Feb. 5, 2024, 7:51 a.m.)
Indexed	1 year, 1 month ago (July 31, 2024, 3:54 p.m.)
Issued	44 years, 2 months ago (June 15, 1981)
Published	44 years, 2 months ago (June 15, 1981)
Published Print	44 years, 2 months ago (June 15, 1981)

Funders 0

None

BibTeX

@article{Petroff_1981, title={Luminescence properties of GaAs-Ga1−x Alx As double heterostructures and multiquantum-well superlattices grown by molecular beam epitaxy}, volume={38}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.92237}, DOI={10.1063/1.92237}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Petroff, P. M. and Weisbuch, C. and Dingle, R. and Gossard, A. C. and Wiegmann, W.}, year={1981}, month=jun, pages={965–968} }

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