Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

30-Å-thick oxide on silicon has been examined in cross section by high-resolution electron microscopy. The oxide thickness was uniform to within 5 Å, even though the oxide undulated up to 8 Å in height and with about 50 Å periodicity.

Bibliography

Krivanek, O. L., & Mazur, J. H. (1980). The structure of ultrathin oxide on silicon. Applied Physics Letters, 37(4), 392–394.

Authors 2
  1. Ondrej L. Krivanek (first)
  2. Jerzy H. Mazur (additional)
References 22 Referenced 72
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Dates
Type When
Created 22 years, 6 months ago (Feb. 13, 2003, 3:58 p.m.)
Deposited 1 year, 6 months ago (Feb. 5, 2024, 7:35 a.m.)
Indexed 3 weeks ago (Aug. 7, 2025, 5:05 p.m.)
Issued 45 years ago (Aug. 15, 1980)
Published 45 years ago (Aug. 15, 1980)
Published Print 45 years ago (Aug. 15, 1980)
Funders 0

None

@article{Krivanek_1980, title={The structure of ultrathin oxide on silicon}, volume={37}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.91954}, DOI={10.1063/1.91954}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Krivanek, Ondrej L. and Mazur, Jerzy H.}, year={1980}, month=aug, pages={392–394} }