DOI: 10.1063/1.91891. Diffusion length determination in <i>p</i>-<i>n</i> junction diodes and solar cells

Diffusion length determination in p-n junction diodes and solar cells

10.1063/1.91891

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

An experimental technique for determining the minority carrier diffusion length in the base region of Si p-n junction diodes and solar cells is described. The procedure is to operate the device in the photoconductive mode and to measure its photoresponse in the wavelength region near the energy gap. The ratio of incident light intensity to photocurrent is a linear function of reciprocal absorption coefficient for each wavelength; the slope of the set of points directly yields the diffusion length. In addition, a nonlinear least-squares analysis is also used to determine the diffusion length.

Bibliography

Arora, N. D., Chamberlain, S. G., & Roulston, D. J. (1980). Diffusion length determination in p-n junction diodes and solar cells. Applied Physics Letters, 37(3), 325â327.

Authors 3

N. D. Arora (first)
S. G. Chamberlain (additional)
D. J. Roulston (additional)

References 11 Referenced 47

{'key': '2024020511534068300_r1', 'first-page': '662', 'volume': 'ED-24', 'year': '1977', 'journal-title': 'IEEE Trans. Electron. Devices'} / IEEE Trans. Electron. Devices (1977)
10.1063/1.89433 / Appl. Phys. Lett. (1977)
{'key': '2024020511534068300_r3', 'first-page': '485', 'volume': 'ED-25', 'year': '1978', 'journal-title': 'IEEE Trans. Electron. Devices'} / IEEE Trans. Electron. Devices (1978)
{'key': '2024020511534068300_r4'}
{'key': '2024020511534068300_r5', 'first-page': '733', 'volume': 'ED-26', 'year': '1979', 'journal-title': 'IEEE Trans. Electron. Devices'} / IEEE Trans. Electron. Devices (1979)
10.1063/1.1722879 / J. Appl. Phys. (1957)
{'key': '2024020511534068300_r7'}
10.1016/0042-207X(54)90264-X / Vacuum (1954)
10.1103/PhysRev.120.37 / Phys. Rev. (1960)
10.1016/0038-1101(72)90168-2 / Solid State Electron. (1972)
10.1093/comjnl/7.4.303 / Comput. J. (1965)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 3:58 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 7:31 a.m.)
Indexed	3 months, 1 week ago (May 15, 2025, 7:27 a.m.)
Issued	45 years ago (Aug. 1, 1980)
Published	45 years ago (Aug. 1, 1980)
Published Print	45 years ago (Aug. 1, 1980)

Funders 0

None

BibTeX

@article{Arora_1980, title={Diffusion length determination in p-n junction diodes and solar cells}, volume={37}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.91891}, DOI={10.1063/1.91891}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Arora, N. D. and Chamberlain, S. G. and Roulston, D. J.}, year={1980}, month=aug, pages={325–327} }

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