DOI: 10.1063/1.91666. Oxidized amorphous-silicon superconducting tunnel junction barriers

Oxidized amorphous-silicon superconducting tunnel junction barriers

10.1063/1.91666

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A systematic study of the behavior of oxidized amorphous silicon layers as tunneling barriers in transition-metal-based superconducting tunnel junctions is reported. These barriers are found to work universally well, provided the native oxide of the base electrode has a sufficiently low conductance to block pinholes. For silicon layers larger than ∼2 nm the properties of the barriers are found to be independent of the base electrode and lead to a simple model of the barrier which should be useful for further applications.

Bibliography

Rudman, D. A., & Beasley, M. R. (1980). Oxidized amorphous-silicon superconducting tunnel junction barriers. Applied Physics Letters, 36(12), 1010â1013.

Authors 2

D. A Rudman (first)
M. R. Beasley (additional)

References 13 Referenced 66

{'key': '2024020511492514300_r1', 'first-page': '289', 'volume': '22', 'year': '1977', 'journal-title': 'Bull, Am. Phys. Soc.'} / Bull, Am. Phys. Soc. (1977)
10.1103/PhysRevB.20.2721 / Phys. Rev. B (1979)
{'key': '2024020511492514300_r2', 'first-page': '582', 'volume': 'MAG-15', 'year': '1979', 'journal-title': 'IEEE Trans. Magn.'} / IEEE Trans. Magn. (1979)
10.1063/1.90459 / Appl. Phys. Lett. (1978)
{'key': '2024020511492514300_r4', 'first-page': '455', 'volume': '24', 'year': '1979', 'journal-title': 'Bull. Am. Phys. Soc.'} / Bull. Am. Phys. Soc. (1979)
{'key': '2024020511492514300_r5'}
{'key': '2024020511492514300_r6', 'first-page': '201', 'volume': 'MAG-11', 'year': '1975', 'journal-title': 'IEEE Trans. Magn.'} / IEEE Trans. Magn. (1975)
10.1051/rphysap:0197300804046700 / Rev. Phys. Appl. (1973)
{'key': '2024020511492514300_r8'}
10.1063/1.323289 / J. Appl. Phys. (1976)
10.1063/1.1662979 / J. Appl. Phys. (1974)
{'key': '2024020511492514300_r11'}
{'key': '2024020511492514300_r12'}

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 3:51 p.m.)
Deposited	1 year, 7 months ago (Feb. 5, 2024, 7:29 a.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 7:58 p.m.)
Issued	45 years, 2 months ago (June 15, 1980)
Published	45 years, 2 months ago (June 15, 1980)
Published Print	45 years, 2 months ago (June 15, 1980)

Funders 0

None

BibTeX

@article{Rudman_1980, title={Oxidized amorphous-silicon superconducting tunnel junction barriers}, volume={36}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.91666}, DOI={10.1063/1.91666}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rudman, D. A and Beasley, M. R.}, year={1980}, month=jun, pages={1010–1013} }

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