DOI: 10.1063/1.91283. Removal of radiation-induced electron traps in MOS structures by rf annealing

Removal of radiation-induced electron traps in MOS structures by rf annealing

10.1063/1.91283

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

rf annealing technique has been successfully applied to remove the radiation-induced electron traps in MOS structures. The experimental details, including the annealing apparatus, sample fabrication and irradiation, sample measurements, and data analysis will be described. Some suggestions concerning the possible mechanisms involved in the annealing of neutral traps, in particular, the recombination-enhanced defect reactions, will be presented.

Bibliography

Ma, T. P., & Chin, M. R. (1980). Removal of radiation-induced electron traps in MOS structures by rf annealing. Applied Physics Letters, 36(1), 81â84.

Authors 2

T. P. Ma (first)
M. R. Chin (additional)

References 26 Referenced 15

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{'key': '2024020511313947900_r2', 'first-page': '105', 'volume': 'ED-18', 'year': '1971', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1971)
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10.1063/1.88991 / Appl. Phys. Lett. (1976)
10.1007/BF02660375 / J. Electron. Mater. (1977)
{'key': '2024020511313947900_r6'}
{'key': '2024020511313947900_r7', 'first-page': '318', 'volume': 'ED-26', 'year': '1979', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1979)
10.1063/1.1663215 / J. Appl. Phys. (1974)
10.1063/1.322706 / J. Appl. Phys. (1976)
10.1063/1.325241 / J. Appl. Phys. (1978)
{'key': '2024020511313947900_r11', 'first-page': '372', 'volume': 'ED-26', 'year': '1979', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1979)
{'key': '2024020511313947900_r12', 'first-page': '644', 'volume': 'ED-26', 'year': '1979', 'journal-title': 'IEEE Trans.'} / IEEE Trans. (1979)
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{'key': '2024020511313947900_r14', 'first-page': '346', 'volume': 'ED-26', 'year': '1979', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1979)
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Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 3:51 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 6:57 a.m.)
Indexed	1 year, 1 month ago (July 8, 2024, 1:52 a.m.)
Issued	45 years, 8 months ago (Jan. 1, 1980)
Published	45 years, 8 months ago (Jan. 1, 1980)
Published Print	45 years, 8 months ago (Jan. 1, 1980)

Funders 0

None

BibTeX

@article{Ma_1980, title={Removal of radiation-induced electron traps in MOS structures by rf annealing}, volume={36}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.91283}, DOI={10.1063/1.91283}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ma, T. P. and Chin, M. R.}, year={1980}, month=jan, pages={81–84} }

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