DOI: 10.1063/1.90983. Studies of the Si-SiO2 interface by MeV ion channeling

Studies of the Si-SiO2 interface by MeV ion channeling

10.1063/1.90983

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

By performing backscattering-channeling measurements in two different geometries on thin Si crystals thermally oxidized at 800 °C, we have obtained upper and lower limits of the number of reconstructed Si layers at the Si-SiO2 interface. The results indicate an abrupt Si-SiO2 interface with one to two monolayers of Si reconstruction.

Bibliography

Cheung, N. W., Feldman, L. C., Silverman, P. J., & Stensgaard, I. (1979). Studies of the Si-SiO2 interface by MeV ion channeling. Applied Physics Letters, 35(11), 859â861.

Authors 4

N. W. Cheung (first)
L. C. Feldman (additional)
P. J. Silverman (additional)
I. Stensgaard (additional)

References 7 Referenced 62

{'key': '2024020511290464100_r1'}
{'key': '2024020511290464100_r2'}
10.1103/PhysRevLett.41.1396 / Phys. Rev. Lett. (1978)
10.1063/1.322117 / J. Appl. Phys. (1975)
10.1016/0039-6028(78)90137-1 / Surf. Sci. (1978)
{'key': '2024020511290464100_r6'}
10.1103/PhysRevB.6.1382 / Phys. Rev. B (1972)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 3:44 p.m.)
Deposited	1 year, 7 months ago (Feb. 5, 2024, 6:53 a.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 5:24 p.m.)
Issued	45 years, 9 months ago (Dec. 1, 1979)
Published	45 years, 9 months ago (Dec. 1, 1979)
Published Print	45 years, 9 months ago (Dec. 1, 1979)

Funders 0

None

BibTeX

@article{Cheung_1979, title={Studies of the Si-SiO2 interface by MeV ion channeling}, volume={35}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.90983}, DOI={10.1063/1.90983}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Cheung, N. W. and Feldman, L. C. and Silverman, P. J. and Stensgaard, I.}, year={1979}, month=dec, pages={859–861} }

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