DOI: 10.1063/1.90931. A majority-carrier camel diode

10.1063/1.90931

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A majority-carrier diode concept is described in which current flow is controlled by a potential hump in the bulk of a semiconductor. Devices of this type, called camel diodes, having ideality factors &lt;2 have been realized using low-energy ion implantation.

Bibliography

Shannon, J. M. (1979). A majority-carrier camel diode. Applied Physics Letters, 35(1), 63â65.

Authors 1

J. M. Shannon (first)

References 4 Referenced 98

{'key': '2024020511143443900_r1'}
{'key': '2024020511143443900_r2'}
10.1063/1.1655287 / Appl. Phys. Lett. (1974)
10.1016/0038-1101(76)90019-8 / Solid-State Electron. (1976)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 3:44 p.m.)
Deposited	1 year, 7 months ago (Feb. 5, 2024, 6:31 a.m.)
Indexed	1 year, 2 months ago (July 5, 2024, 5:18 p.m.)
Issued	46 years, 2 months ago (July 1, 1979)
Published	46 years, 2 months ago (July 1, 1979)
Published Print	46 years, 2 months ago (July 1, 1979)

Funders 0

None

BibTeX

@article{Shannon_1979, title={A majority-carrier camel diode}, volume={35}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.90931}, DOI={10.1063/1.90931}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Shannon, J. M.}, year={1979}, month=jul, pages={63–65} }

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