Abstract
We report the development of infrared photoconductive detectors which are background fluctuation noise limited at photon fluxes ≲108 s−1. The detectors were fabricated from germanium doped with 2×1014 cm−3 gallium. Detectors operated in the conventional manner at T=3 K showed significant photoconductive response for wavelengths out to 120 μm with a minimum NEP of 2.4×10−17 W Hz−1/2 at 94 μm. Detectors operated at T=2 K with a uniaxial stress of 60 kgf mm−2 applied along a [100] direction showed significant response to 205 μm and gave a minimum NEP of 5.7×1017 W Hz−1/2 at ≈150 μm. The stressed detectors are four orders of magnitude more sensitive than any previous photoconductor beyond 120 μm.
References
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Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 13, 2003, 3:39 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 6:19 a.m.) |
Indexed | 2 weeks, 6 days ago (Aug. 6, 2025, 9:14 a.m.) |
Issued | 46 years, 4 months ago (April 15, 1979) |
Published | 46 years, 4 months ago (April 15, 1979) |
Published Print | 46 years, 4 months ago (April 15, 1979) |
@article{Haller_1979, title={Ge : Ga photoconductors in low infrared backgrounds}, volume={34}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.90861}, DOI={10.1063/1.90861}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Haller, E. E. and Hueschen, M. R. and Richards, P. L.}, year={1979}, month=apr, pages={495–497} }