DOI: 10.1063/1.90498. Observation of an intermediate chemical state of silicon in the Si/SiO2 interface by Auger sputter profiling

Observation of an intermediate chemical state of silicon in the Si/SiO2 interface by Auger sputter profiling

10.1063/1.90498

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have observed, for the first time, a chemical state of silicon different from that of the pure bulk silicon or silicon in SiO2, using Auger electron spectroscopy. In the E N (E) spectra this state gives a major transition at 83.3 eV compared to 90.3 eV for bulk Si and 74.2 eV for SiO2. We have observed this state both at the Si/SiO2 interface of MOS oxide structures during sputter profiling and for thin native oxides without sputtering. The state is difficult to see in the dE N (E)/dE spectra due to the presence of the sharp edge of the free silicon peak at 92 eV which tends to mask it.

Bibliography

Helms, C. R., Strausser, Y. E., & Spicer, W. E. (1978). Observation of an intermediate chemical state of silicon in the Si/SiO2 interface by Auger sputter profiling. Applied Physics Letters, 33(8), 767â769.

Authors 3

C. R. Helms (first)
Y. E. Strausser (additional)
W. E. Spicer (additional)

References 11 Referenced 74

10.1016/0009-2614(75)80276-4 / Chem. Phys. Lett. (1975)
10.1116/1.568955 / J. Vac. Sci. Technol. (1976)
10.1116/1.569211 / J. Vac. Sci. Technol. (1977)
10.1016/0009-2614(76)80496-4 / Chem. Phys. Lett. (1976)
{'key': '2024020510521105900_r5', 'first-page': '2108', 'volume': 'NS-24', 'year': '1977', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1977)
{'key': '2024020510521105900_r6'}
10.1063/1.323047 / J. Appl. Phys. (1976)
10.1016/0038-1098(78)90787-1 / Solid State Commun. (1978)
{'key': '2024020510521105900_r9'}
{'key': '2024020510521105900_r10', 'first-page': '1154', 'volume': '6', 'year': '1976', 'journal-title': 'Phys. Rev. Lett. B'} / Phys. Rev. Lett. B (1976)
10.1016/0038-1098(77)90354-4 / Solid State Commun. (1977)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 3:32 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 5:52 a.m.)
Indexed	2 months ago (June 25, 2025, 8:10 p.m.)
Issued	46 years, 10 months ago (Oct. 15, 1978)
Published	46 years, 10 months ago (Oct. 15, 1978)
Published Print	46 years, 10 months ago (Oct. 15, 1978)

Funders 0

None

BibTeX

@article{Helms_1978, title={Observation of an intermediate chemical state of silicon in the Si/SiO2 interface by Auger sputter profiling}, volume={33}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.90498}, DOI={10.1063/1.90498}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Helms, C. R. and Strausser, Y. E. and Spicer, W. E.}, year={1978}, month=oct, pages={767–769} }

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