Abstract
GaAs solar cells with conversion efficiencies as high as 14% at AM1 have been grown by the GaCl/AsH3 hydride technique. Thin (∼200 Å) layers of InGaP were used to passivate the GaAs top surface. We observe a 70-fold increase in photoluminescence intensity of the GaAs after passivation, which is consistent with a lowering of the GaAs surface recombination velocity from ≳106 to <104 cm/sec. Short-circuit current densities (Jsc) as high as 22 mA/cm2 and open-circuit voltages as high as 0.96 V were observed. (If achieved together, those values would yield an efficiency of almost 18%.) Voc was observed to increase directly with p-layer thickness (t), whereas Jsc decreased directly with t. The efficiency also increased as the zinc doping was decreased.
References
9
Referenced
35
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Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 13, 2003, 3:32 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 5:49 a.m.) |
Indexed | 5 months ago (March 24, 2025, 1:56 a.m.) |
Issued | 46 years, 10 months ago (Oct. 1, 1978) |
Published | 46 years, 10 months ago (Oct. 1, 1978) |
Published Print | 46 years, 10 months ago (Oct. 1, 1978) |
@article{Olsen_1978, title={Vapor-grown InGaP/GaAs solar cells}, volume={33}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.90477}, DOI={10.1063/1.90477}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Olsen, G.H. and Ettenberg, M. and D’Aiello, R. V.}, year={1978}, month=oct, pages={606–608} }