Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

GaAs solar cells with conversion efficiencies as high as 14% at AM1 have been grown by the GaCl/AsH3 hydride technique. Thin (∼200 Å) layers of InGaP were used to passivate the GaAs top surface. We observe a 70-fold increase in photoluminescence intensity of the GaAs after passivation, which is consistent with a lowering of the GaAs surface recombination velocity from ≳106 to <104 cm/sec. Short-circuit current densities (Jsc) as high as 22 mA/cm2 and open-circuit voltages as high as 0.96 V were observed. (If achieved together, those values would yield an efficiency of almost 18%.) Voc was observed to increase directly with p-layer thickness (t), whereas Jsc decreased directly with t. The efficiency also increased as the zinc doping was decreased.

Bibliography

Olsen, G. H., Ettenberg, M., & D’Aiello, R. V. (1978). Vapor-grown InGaP/GaAs solar cells. Applied Physics Letters, 33(7), 606–608.

Authors 3
  1. G.H. Olsen (first)
  2. M. Ettenberg (additional)
  3. R. V. D’Aiello (additional)
References 9 Referenced 35
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  6. {'key': '2024020510493407900_r6'}
  7. 10.1063/1.322076 / J. Appl. Phys. (1975)
  8. {'key': '2024020510493407900_r8'}
  9. 10.1063/1.89664 / Appl. Phys. Lett. (1977)
Dates
Type When
Created 22 years, 6 months ago (Feb. 13, 2003, 3:32 p.m.)
Deposited 1 year, 6 months ago (Feb. 5, 2024, 5:49 a.m.)
Indexed 5 months ago (March 24, 2025, 1:56 a.m.)
Issued 46 years, 10 months ago (Oct. 1, 1978)
Published 46 years, 10 months ago (Oct. 1, 1978)
Published Print 46 years, 10 months ago (Oct. 1, 1978)
Funders 0

None

@article{Olsen_1978, title={Vapor-grown InGaP/GaAs solar cells}, volume={33}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.90477}, DOI={10.1063/1.90477}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Olsen, G.H. and Ettenberg, M. and D’Aiello, R. V.}, year={1978}, month=oct, pages={606–608} }