DOI: 10.1063/1.90369. Time-resolved reflectivity of ion-implanted silicon during laser annealing

Time-resolved reflectivity of ion-implanted silicon during laser annealing

10.1063/1.90369

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The time-resolved reflectivity at 0.63 μm from arsenic-implanted silicon crystals has been measured during annealing by a 1.06-μm laser pulse of 50-ns duration. The reflectivity was observed to change abruptly to the value consistent with liquid silicon and to remain at that value for a period of time which ranged from a few tens of nanoseconds to several hundreds of nanoseconds, depending on the annealing pulse intensity. Concurrently, the transmission of the primary annealing beam dropped abruptly. These observations confirm the formation of a metallic liquid phase at the crystal surface during the annealing process.

Bibliography

Auston, D. H., Surko, C. M., Venkatesan, T. N. C., Slusher, R. E., & Golovchenko, J. A. (1978). Time-resolved reflectivity of ion-implanted silicon during laser annealing. Applied Physics Letters, 33(5), 437â440.

Authors 5

D. H. Auston (first)
C. M. Surko (additional)
T. N. C. Venkatesan (additional)
R. E. Slusher (additional)
J. A. Golovchenko (additional)

References 16 Referenced 307

{'key': '2024020510450768300_r1', 'first-page': '190', 'volume': '11', 'year': '1977', 'journal-title': 'Sov. Phys.-Semicond.'} / Sov. Phys.-Semicond. (1977)
10.1063/1.89959 / Appl. Phys. Lett. (1978)
10.1063/1.89960 / Appl. Phys. Lett. (1978)
10.1063/1.89962 / Appl. Phys. Lett. (1978)
10.1063/1.90109 / Appl. Phys. Lett. (1978)
{'key': '2024020510450768300_r2', 'first-page': '350', 'volume': '11', 'year': '1977', 'journal-title': 'Sov. Phys.-Semicond.'} / Sov. Phys.-Semicond. (1977)
{'key': '2024020510450768300_r2a'}
{'key': '2024020510450768300_r2b'}
10.1063/1.90109 / Appl. Phys. Lett. (1978)
10.1063/1.90119 / Appl. Phys. Lett. (1978)
10.1063/1.1656110 / J. Appl. Phys. (1968)
10.1063/1.321848 / J. Appl. Phys. (1975)
{'key': '2024020510450768300_r3', 'first-page': '2111', 'volume': '16', 'year': '1975', 'journal-title': 'Sov. Phys.-Solid State'} / Sov. Phys.-Solid State (1975)
{'key': '2024020510450768300_r4', 'first-page': '1082', 'volume': '42', 'year': '1968', 'journal-title': 'Russ. J. Phys. Chem.'} / Russ. J. Phys. Chem. (1968)
10.1103/PhysRev.167.765 / Phys. Rev. (1968)
10.1063/1.90411 / Appl. Phys. Lett. (1978)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 3:32 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 5:45 a.m.)
Indexed	2 weeks, 6 days ago (Aug. 6, 2025, 8 a.m.)
Issued	46 years, 11 months ago (Sept. 1, 1978)
Published	46 years, 11 months ago (Sept. 1, 1978)
Published Print	46 years, 11 months ago (Sept. 1, 1978)

Funders 0

None

BibTeX

@article{Auston_1978, title={Time-resolved reflectivity of ion-implanted silicon during laser annealing}, volume={33}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.90369}, DOI={10.1063/1.90369}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Auston, D. H. and Surko, C. M. and Venkatesan, T. N. C. and Slusher, R. E. and Golovchenko, J. A.}, year={1978}, month=sep, pages={437–440} }

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