DOI: 10.1063/1.90354. The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process

The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process

10.1063/1.90354

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have prepared several thicknesses of ∼1 cm by ∼1 cm epitaxial single crystals of AlN with a ’’high temperature (∼1800 °C) close-spaced vapor transport’’ technique. These crystals have been grown both on (011̄2) and (0001) sapphire wafers. The optical absorption edge is measured at 300 K and for the first time at low temperature (5 K). This data is parametrized to include both reflection losses due to scattering off surface imperfections and contributions from impurity absorption bands. This parametrization technique is used to determine the band gap and the nature, direct or indirect, of the absorption edge. A value of 6.28 eV was found to be the best value of Eg(5 K) and the gap was found to be direct.

Bibliography

Perry, P. B., & Rutz, R. F. (1978). The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process. Applied Physics Letters, 33(4), 319â321.

Authors 2

P. B. Perry (first)
R. F. Rutz (additional)

References 11 Referenced 193

10.1016/0038-1098(65)90231-0 / Solid State Commun. (1965)
10.1002/pssb.19680260223 / Phys. Status, Solidi (1968)
10.1016/0038-1098(68)90503-6 / Solid State Commun. (1968)
10.1002/pssb.19690350245 / Phys. Status Solidi (1969)
10.1016/0022-0248(76)90139-1 / J. Cryst. Growth (1976)
10.1063/1.88788 / Appl. Phys. Lett. (1976)
10.1002/pssa.2210390119 / Phys. Status Solidi A (1977)
10.1063/1.1661876 / J. Appl. Phys. (1973)
10.1116/1.1492658 / J. Vac. Sci. Technol. (1969)
{'key': '2024020510462556700_r10'}
10.1093/comjnl/6.2.163 / Comput. J. (1963)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 3:32 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 5:46 a.m.)
Indexed	3 weeks, 5 days ago (Aug. 2, 2025, 12:37 a.m.)
Issued	47 years ago (Aug. 15, 1978)
Published	47 years ago (Aug. 15, 1978)
Published Print	47 years ago (Aug. 15, 1978)

Funders 0

None

BibTeX

@article{Perry_1978, title={The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process}, volume={33}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.90354}, DOI={10.1063/1.90354}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Perry, P. B. and Rutz, R. F.}, year={1978}, month=aug, pages={319–321} }

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