DOI: 10.1063/1.90214. LEIT effect in metal-insulator-semiconductor tunnel junctions

LEIT effect in metal-insulator-semiconductor tunnel junctions

10.1063/1.90214

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Light emission via inelastic tunneling (LEIT) has been observed from the metal-insulator-semiconductor tunnel-junction Al-Al2O3- Sn-doped indium oxide (ITO). The spectra exhibit the bias-voltage-dependent upper-frequency quantum cutoff relation. These devices were stable at room temperature for months at a time while biased to 3 V. The external quantum efficiency of this metal-insulator-semiconductor system is about 0.1 that of the metal-insulator-metal system Al-Al2O3-Ag. Enhancement of the light emission using silver particle resonators is also reported.

Bibliography

McCarthy, S. L., & Lambe, J. (1978). LEIT effect in metal-insulator-semiconductor tunnel junctions. Applied Physics Letters, 33(10), 858â860.

Authors 2

S. L. McCarthy (first)
John Lambe (additional)

References 18 Referenced 34

10.1103/PhysRevLett.37.923 / Phys. Rev. Lett. (1976)
10.1063/1.89434 / Appl. Phys. Lett. (1977)
10.1063/1.89842 / Appl. Phys. Lett. (1978)
10.1063/1.90123 / Appl. Phys. Lett. (1978)
10.1002/pssa.2210290110 / Phys. Status Solidi A (1975)
10.1103/PhysRevB.16.2482 / Phys. Rev. B (1977)
10.1103/PhysRev.182.539 / Phys. Rev. (1969)
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10.1103/PhysRevLett.22.293 / Phys. Rev. Lett. (1969)
{'key': '2024020510551067600_r10'}
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{'key': '2024020510551067600_r12'}
{'key': '2024020510551067600_r13'}
10.1116/1.568633 / J. Vac. Sci. Technol. (1975)
{'key': '2024020510551067600_r15'}
{'key': '2024020510551067600_r16'}
10.1103/PhysRev.172.436 / Phys. Rev. (1968)
{'key': '2024020510551067600_r18'}

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 3:32 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 5:55 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 9:28 a.m.)
Issued	46 years, 9 months ago (Nov. 15, 1978)
Published	46 years, 9 months ago (Nov. 15, 1978)
Published Print	46 years, 9 months ago (Nov. 15, 1978)

Funders 0

None

BibTeX

@article{McCarthy_1978, title={LEIT effect in metal-insulator-semiconductor tunnel junctions}, volume={33}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.90214}, DOI={10.1063/1.90214}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={McCarthy, S. L. and Lambe, John}, year={1978}, month=nov, pages={858–860} }

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