Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Room-temperature operation of new type of Ga1−xAlxAs-GaAs laser employing distributed Bragg reflectors for optical and carrier confinement has been demonstrated. These distributed-Bragg-confinement lasers are grown by metalorganic chemical vapor deposition and exhibit low-threshold current densities and small angular beam divergence.

Bibliography

Dupuis, R. D., & Dapkus, P. D. (1978). Room-temperature operation of distributed-Bragg-confinement Ga1−xAlxAs-GaAs lasers grown by metalorganic chemical vapor deposition. Applied Physics Letters, 33(1), 68–69.

Authors 2
  1. R. D. Dupuis (first)
  2. P. D. Dapkus (additional)
References 15 Referenced 27
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Dates
Type When
Created 22 years, 6 months ago (Feb. 13, 2003, 3:32 p.m.)
Deposited 1 year, 6 months ago (Feb. 5, 2024, 5:42 a.m.)
Indexed 1 year, 6 months ago (Feb. 5, 2024, 6:12 a.m.)
Issued 47 years, 2 months ago (July 1, 1978)
Published 47 years, 2 months ago (July 1, 1978)
Published Print 47 years, 2 months ago (July 1, 1978)
Funders 0

None

@article{Dupuis_1978, title={Room-temperature operation of distributed-Bragg-confinement Ga1−xAlxAs-GaAs lasers grown by metalorganic chemical vapor deposition}, volume={33}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.90147}, DOI={10.1063/1.90147}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Dupuis, R. D. and Dapkus, P. D.}, year={1978}, month=jul, pages={68–69} }