DOI: 10.1063/1.89799. Room-temperature interfacial reaction in Au-semiconductor systems

Room-temperature interfacial reaction in Au-semiconductor systems

10.1063/1.89799

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Au(evaporated film) -semiconductor(substrate) systems were studied by Auger electron spectroscopy. For semiconductors with energy gaps (Eg) smaller than ∼2.5 eV, even at room temperature a considerable fraction of atoms constituting the semiconductors were found to accumulate on the surfaces of Au films, indicating ready interfacial interaction between these materials. Study of the interface regions of the above systems verified the occurrence of the room-temperature interfacial reactions.

Bibliography

Hiraki, A., Shuto, K., Kim, S., Kammura, W., & Iwami, M. (1977). Room-temperature interfacial reaction in Au-semiconductor systems. Applied Physics Letters, 31(9), 611â612.

Authors 5

A. Hiraki (first)
K. Shuto (additional)
S. Kim (additional)
W. Kammura (additional)
M. Iwami (additional)

References 6 Referenced 145

10.1063/1.1661782 / J. Appl. Phys. (1972)
10.1063/1.1654685 / Appl. Phys. Lett. (1973)
10.1016/0040-6090(75)90060-7 / Thin Solid Films (1975)
10.1016/0039-6028(70)90153-6 / Surf. Sci. (1970)
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Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 3:20 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 5:17 a.m.)
Indexed	1 day, 17 hours ago (Aug. 21, 2025, 12:42 p.m.)
Issued	47 years, 9 months ago (Nov. 1, 1977)
Published	47 years, 9 months ago (Nov. 1, 1977)
Published Print	47 years, 9 months ago (Nov. 1, 1977)

Funders 0

None

BibTeX

@article{Hiraki_1977, title={Room-temperature interfacial reaction in Au-semiconductor systems}, volume={31}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.89799}, DOI={10.1063/1.89799}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hiraki, A. and Shuto, K. and Kim, S. and Kammura, W. and Iwami, M.}, year={1977}, month=nov, pages={611–612} }

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