DOI: 10.1063/1.89674. Reversible conductivity changes in discharge-produced amorphous Si

Reversible conductivity changes in discharge-produced amorphous Si

10.1063/1.89674

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A new reversible photoelectronic effect is reported for amorphous Si produced by glow discharge of SiH4. Long exposure to light decreases both the photoconductivity and the dark conductivity, the latter by nearly four orders of magnitude. Annealing above 150 °C reverses the process. A model involving optically induced changes in gap states is proposed. The results have strong implications for both the physical nature of the material and for its applications in thin-film solar cells, as well as the reproducibility of measurements on discharge-produced Si.

Bibliography

Staebler, D. L., & Wronski, C. R. (1977). Reversible conductivity changes in discharge-produced amorphous Si. Applied Physics Letters, 31(4), 292â294.

Authors 2

D. L. Staebler (first)
C. R. Wronski (additional)

References 18 Referenced 2,585

10.1149/1.2411779 / J. Electrochem. Soc. (1969)
10.1016/0022-3093(70)90181-X / J. Non-Cryst. Solids (1970)
10.1063/1.88617 / Appl. Phys. Lett. (1976)
{'key': '2024020510095666900_r4', 'first-page': '95', 'volume': '6', 'year': '1976', 'journal-title': 'J. Electron. Mater.'} / J. Electron. Mater. (1976)
{'key': '2024020510095666900_r5'}
{'key': '2024020510095666900_r6', 'first-page': '55', 'volume': '13', 'year': '1974', 'journal-title': 'J. Non-Cryst. Solids'} / J. Non-Cryst. Solids (1974)
{'key': '2024020510095666900_r7'}
10.1080/14786437608221926 / Philos. Mag. (1976)
10.1007/BF01392743 / Z. Phys. (1955)
{'key': '2024020510095666900_r10'}
{'key': '2024020510095666900_r11'}
{'key': '2024020510095666900_r12'}
{'key': '2024020510095666900_r13'}
10.1016/0038-1098(74)90840-0 / Solid State Commun. (1974)
{'key': '2024020510095666900_r15', 'first-page': '2632', 'volume': 'B1', 'year': '1970', 'journal-title': 'Phys. Rev.'} / Phys. Rev. (1970)
10.1016/0038-1098(76)90096-X / Solid State Commun. (1976)
{'key': '2024020510095666900_r17', 'first-page': '598', 'volume': '1', 'year': '1967', 'journal-title': 'Soviet Physics Semiconductors'} / Soviet Physics Semiconductors (1967)
{'key': '2024020510095666900_r18', 'first-page': '351', 'volume': 'ED-24', 'year': '1977', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1977)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 3:20 p.m.)
Deposited	1 year, 7 months ago (Feb. 5, 2024, 5:10 a.m.)
Indexed	2 days, 21 hours ago (Sept. 3, 2025, 6:39 a.m.)
Issued	48 years ago (Aug. 15, 1977)
Published	48 years ago (Aug. 15, 1977)
Published Print	48 years ago (Aug. 15, 1977)

Funders 0

None

BibTeX

@article{Staebler_1977, title={Reversible conductivity changes in discharge-produced amorphous Si}, volume={31}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.89674}, DOI={10.1063/1.89674}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Staebler, D. L. and Wronski, C. R.}, year={1977}, month=aug, pages={292–294} }

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