DOI: 10.1063/1.89289. The Si/SiO2 interface examined by cross-sectional transmission electron microscopy

The Si/SiO2 interface examined by cross-sectional transmission electron microscopy

10.1063/1.89289

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Thin (200–300 Å) cross sections of Si/SiO2 have been examined by transmission electron microscopy at a resolution of better than 10 Å to search for crystalline Si protrusions into, or islands in, the thermally grown SiO2. Within the resolution obtained, no evidence was found for any phase separation within the amorphous oxide layer.

Bibliography

Blanc, J., Buiocchi, C. J., Abrahams, M. S., & Ham, W. E. (1977). The Si/SiO2 interface examined by cross-sectional transmission electron microscopy. Applied Physics Letters, 30(2), 120â122.

Authors 4

J. Blanc (first)
C. J. Buiocchi (additional)
M. S. Abrahams (additional)
W. E. Ham (additional)

References 7 Referenced 50

10.1063/1.1655297 / Appl. Phys. Lett. (1974)
10.1063/1.88345 / Appl. Phys. Lett. (1975)
10.1063/1.1655112 / Appl. Phys. Lett. (1974)
10.1063/1.323047 / J. Appl. Phys. (1976)
10.1063/1.88523 / Appl. Phys. Lett. (1975)
10.1016/0022-0248(71)90217-X / J. Cryst. Growth (1971)
10.1063/1.1663778 / J. Appl. Phys. (1974)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 3:15 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 4:55 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 10:20 a.m.)
Issued	48 years, 7 months ago (Jan. 15, 1977)
Published	48 years, 7 months ago (Jan. 15, 1977)
Published Print	48 years, 7 months ago (Jan. 15, 1977)

Funders 0

None

BibTeX

@article{Blanc_1977, title={The Si/SiO2 interface examined by cross-sectional transmission electron microscopy}, volume={30}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.89289}, DOI={10.1063/1.89289}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Blanc, J. and Buiocchi, C. J. and Abrahams, M. S. and Ham, W. E.}, year={1977}, month=jan, pages={120–122} }

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