Abstract
Polycrystalline aluminum samples are irradiated with 40-keV He+. At moderate target temperatures (∼0.3Tm) a prominent and distinct enhancement of the light intensity from sputtered excited aluminum atoms is observed after implantation to a critical dose of 4×1017 He+/cm2. It is shown that this effect is associated with a sudden increase in the erosion rate of Al and in the surface exfoliation due to radiation blistering. At higher target temperatures (∼0.7Tm) a less pronounced increase in the photon intensity and a different surface structure is observed.
References
14
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Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 13, 2003, 3:09 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 4:46 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 5, 2024, 5:10 a.m.) |
Issued | 48 years, 9 months ago (Nov. 1, 1976) |
Published | 48 years, 9 months ago (Nov. 1, 1976) |
Published Print | 48 years, 9 months ago (Nov. 1, 1976) |
@article{Braun_1976, title={Dose dependence of the photon emission from sputtered aluminum atoms during helium irradiation}, volume={29}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.89178}, DOI={10.1063/1.89178}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Braun, M. and Emmoth, B.}, year={1976}, month=nov, pages={545–547} }