Abstract
Conventional double-heterostructure lasers with a thin n-Ga1−yAlyAs layer grown on a periodically corrugated n-GaAs substrate have been operated at room temperature. The evanescent tail of the guided mode interacts with the substrate corrugation to produce both distributed feedback and output coupling perpendicular to the waveguide. A single polarized low-divergence (0.65°×10°) output beam at 8825 Å radiated normal to the waveguide was obtained from such a diode with cleaved end facets at a threshold current of 4.1 kA/cm2.
References
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Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 13, 2003, 2:59 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 4:16 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 5, 2024, 6:07 a.m.) |
Issued | 49 years, 11 months ago (Sept. 1, 1975) |
Published | 49 years, 11 months ago (Sept. 1, 1975) |
Published Print | 49 years, 11 months ago (Sept. 1, 1975) |
@article{Scifres_1975, title={Output coupling and distributed feedback utilizing substrate corrugations in double-heterostructure GaAs lasers}, volume={27}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.88452}, DOI={10.1063/1.88452}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scifres, D. R. and Burnham, R. D. and Streifer, W.}, year={1975}, month=sep, pages={295–297} }