DOI: 10.1063/1.88261. Inverted silicon island edge observation in SOS/CMOS transistors by SEM EBIC methods

Inverted silicon island edge observation in SOS/CMOS transistors by SEM EBIC methods

10.1063/1.88261

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Impurity redistribution during thermal oxidation in the n-channel transistor of SOS/CMOS can result in an inversion of silicon material type (from p to n) along the island edge and extending from drain to source. This inverted island edge produces excessive drain-to-source current leakage. We show that the electron-beam-induced-current (EBIC) mode of operation in the scanning electron microscope (SEM) is an effective method of observing inverted island edges.

Bibliography

Gates, J. L., & Griffith, O. K. (1975). Inverted silicon island edge observation in SOS/CMOS transistors by SEM EBIC methods. Applied Physics Letters, 27(1), 43â45.

Authors 2

J. L. Gates (first)
O. K. Griffith (additional)

References 3 Referenced 6

10.1063/1.1713825 / J. Appl. Phys. (1964)
10.1063/1.1657985 / J. Appl. Phys. (1969)
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Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 2:59 p.m.)
Deposited	1 year, 7 months ago (Feb. 5, 2024, 4:09 a.m.)
Indexed	1 year, 7 months ago (Feb. 5, 2024, 4:40 a.m.)
Issued	50 years, 2 months ago (July 1, 1975)
Published	50 years, 2 months ago (July 1, 1975)
Published Print	50 years, 2 months ago (July 1, 1975)

Funders 0

None

BibTeX

@article{Gates_1975, title={Inverted silicon island edge observation in SOS/CMOS transistors by SEM EBIC methods}, volume={27}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.88261}, DOI={10.1063/1.88261}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Gates, J. L. and Griffith, O. K.}, year={1975}, month=jul, pages={43–45} }

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