DOI: 10.1063/1.88185. Homojunction fabrication in CuInSe2 by copper diffusion

Homojunction fabrication in CuInSe2 by copper diffusion

10.1063/1.88185

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Rectifying p−n junctions have been fabricated in single crystals of CuInSe2 by diffusion of copper at relatively low temperatures. Some evidence of device instability at room temperature has been obtained.

Bibliography

Tomlinson, R. D., Elliott, E., Parkes, J., & Hampshire, M. J. (1975). Homojunction fabrication in CuInSe2 by copper diffusion. Applied Physics Letters, 26(7), 383â383.

Authors 4

R. D. Tomlinson (first)
E. Elliott (additional)
J. Parkes (additional)
M. J. Hampshire (additional)

References 4 Referenced 24

10.1016/0038-1101(73)90173-1 / Solid-State Electron. (1973)
10.1016/0022-0248(73)90099-7 / J. Cryst. Growth (1973)
10.1063/1.1655162 / Appl. Phys. Lett. (1974)
10.1063/1.1661532 / J. Appl. Phys. (1972)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 2:54 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 4:02 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 5:01 a.m.)
Issued	50 years, 5 months ago (April 1, 1975)
Published	50 years, 5 months ago (April 1, 1975)
Published Print	50 years, 5 months ago (April 1, 1975)

Funders 0

None

BibTeX

@article{Tomlinson_1975, title={Homojunction fabrication in CuInSe2 by copper diffusion}, volume={26}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.88185}, DOI={10.1063/1.88185}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tomlinson, R. D. and Elliott, E. and Parkes, J. and Hampshire, M. J.}, year={1975}, month=apr, pages={383–383} }

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