DOI: 10.1063/1.4965837. Size-effect in layered ferrielectric CuInP2S6

Size-effect in layered ferrielectric CuInP2S6

10.1063/1.4965837

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report on polarization switching properties of thin flakes of van der Waals ferrielectric CuInP2S6. We observe mesoscale polarization domains, ferroelectric switching, and the Curie temperature above 299 K down to a thickness of ∼50 nm. However, the electromechanical response is progressively suppressed below 50 nm, and vanishes at room temperature at a thickness of ∼10 nm. Though larger than a single layer, 10 nm is still a very small value compared to the expectations for an intrinsic ferroelectric semiconductor. We therefore propose a model for a doped surface layer that screens spontaneous polarization in this material. The charges in the screening layer may also participate in secondary chemical reactions, which may explain domain pinning observed in thermal cycling of the flakes above the Curie temperature. At the same time, ferroelectric switching is intertwined with ionic diffusion, resulting in erratic and damaging switching at room temperature. Owing to much stronger temperature dependence of ionic diffusion, the two phenomena can be decoupled allowing more reliable switching to be obtained at low temperatures.

Bibliography

Chyasnavichyus, M., Susner, M. A., Ievlev, A. V., Eliseev, E. A., Kalinin, S. V., Balke, N., Morozovska, A. N., McGuire, M. A., & Maksymovych, P. (2016). Size-effect in layered ferrielectric CuInP2S6. Applied Physics Letters, 109(17).

Authors 9

Marius Chyasnavichyus (first)
Michael A. Susner (additional)
Anton V. Ievlev (additional)
Eugene A. Eliseev (additional)
Sergei V. Kalinin (additional)
Nina Balke (additional)
Anna N. Morozovska (additional)
Michael A. McGuire (additional)
Petro Maksymovych (additional)

References 26 Referenced 77

10.1021/acs.nanolett.5b00491 / Nano Lett. (2015)
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10.1038/nature01501 / Nature (2003)
10.1038/nnano.2014.309 / Nat. Nanotechnol. (2015)
10.1103/PhysRevLett.112.157601 / Phys. Rev. Lett. (2014)
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10.1038/ncomms12357 / Nat. Commun. (2016)
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10.1038/nature02308 / Nature (2004)
10.1103/PhysRevB.84.064107 / Phys. Rev. B (2011)
10.1021/acsnano.5b02227 / ACS Nano (2015)
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10.1080/00150199708224175 / Ferroelectrics (1997)
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10.1126/science.1102896 / Science (2004)

Dates

Type	When
Created	8 years, 9 months ago (Oct. 24, 2016, 1 p.m.)
Deposited	2 years, 2 months ago (June 17, 2023, 9:05 p.m.)
Indexed	2 weeks, 5 days ago (Aug. 2, 2025, 12:25 a.m.)
Issued	8 years, 9 months ago (Oct. 24, 2016)
Published	8 years, 9 months ago (Oct. 24, 2016)
Published Online	8 years, 9 months ago (Oct. 24, 2016)
Published Print	8 years, 9 months ago (Oct. 24, 2016)

Funders 1

U.S. Department of Energy 10.13039/100000015
Region: Americas
gov (National government)
Labels8
1. Energy Department
2. Department of Energy
3. United States Department of Energy
4. ENERGY.GOV
5. US Department of Energy
6. USDOE
7. DOE
8. USADOE

BibTeX

@article{Chyasnavichyus_2016, title={Size-effect in layered ferrielectric CuInP2S6}, volume={109}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4965837}, DOI={10.1063/1.4965837}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chyasnavichyus, Marius and Susner, Michael A. and Ievlev, Anton V. and Eliseev, Eugene A. and Kalinin, Sergei V. and Balke, Nina and Morozovska, Anna N. and McGuire, Michael A. and Maksymovych, Petro}, year={2016}, month=oct }

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  "abstract": "<jats:p>We report on polarization switching properties of thin flakes of van der Waals ferrielectric CuInP2S6. We observe mesoscale polarization domains, ferroelectric switching, and the Curie temperature above 299\u2009K down to a thickness of \u223c50\u2009nm. However, the electromechanical response is progressively suppressed below 50\u2009nm, and vanishes at room temperature at a thickness of \u223c10\u2009nm. Though larger than a single layer, 10\u2009nm is still a very small value compared to the expectations for an intrinsic ferroelectric semiconductor. We therefore propose a model for a doped surface layer that screens spontaneous polarization in this material. The charges in the screening layer may also participate in secondary chemical reactions, which may explain domain pinning observed in thermal cycling of the flakes above the Curie temperature. At the same time, ferroelectric switching is intertwined with ionic diffusion, resulting in erratic and damaging switching at room temperature. Owing to much stronger temperature dependence of ionic diffusion, the two phenomena can be decoupled allowing more reliable switching to be obtained at low temperatures.</jats:p>",
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