DOI: 10.1063/1.4963675. Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices

Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices

10.1063/1.4963675

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The resistance switching dynamics of TiN/HfO2/Pt devices is analyzed in this paper. When biased with a voltage ramp of appropriate polarity, the devices experience SET transitions from high to low resistance states in an abrupt manner, which allows identifying a threshold voltage. However, we find that the stimulation with trains of identical pulses at voltages near the threshold results in a gradual SET transition, whereby the resistive state visits a continuum of intermediate levels as it approaches some low resistance state limit. On the contrary, RESET transitions from low to high resistance states proceed in a gradual way under voltage ramp stimulation, while gradual resistance changes driven by trains of identical spikes cover only a limited resistance window. The results are discussed in terms of the relations among the thermo-electrochemical effects of Joule heating, ion mobility, and resistance change, which provide positive and negative closed loop processes in SET and RESET, respectively. Furthermore, the effect of the competition between opposite tendencies of filament dissolution and formation at opposite metal/HfO2 interfaces is discussed as an additional ingredient affecting the switching dynamics.

Bibliography

Brivio, S., Covi, E., Serb, A., Prodromakis, T., Fanciulli, M., & Spiga, S. (2016). Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices. Applied Physics Letters, 109(13).

Authors 6

S. Brivio (first)
E. Covi (additional)
A. Serb (additional)
T. Prodromakis (additional)
M. Fanciulli (additional)
S. Spiga (additional)

References 34 Referenced 50

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I. Gupta, A. Serb, A. Khiat, R. Zeitler, S. Vassanelli, and T. Prodromakis, e-print arXiv:1507.06832 [cs.ET].
10.1016/j.mee.2015.04.052 / Microelectron. Eng. (2015)
10.1109/ISCAS.2016.7527253 / Proceedings of 2016 IEEE International Symposium on Circuits and Systems (ISCAS) Montreal, CA, 22–25 May 2016
10.1021/nn506735m / ACS Nano (2015)
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{'year': '2010', 'key': '2023061802090905200_c34', 'first-page': '1145'} (2010)

Dates

Type	When
Created	8 years, 11 months ago (Sept. 27, 2016, 1 p.m.)
Deposited	2 years, 2 months ago (June 17, 2023, 10:09 p.m.)
Indexed	1 month ago (July 30, 2025, 10:04 a.m.)
Issued	8 years, 11 months ago (Sept. 26, 2016)
Published	8 years, 11 months ago (Sept. 26, 2016)
Published Online	8 years, 11 months ago (Sept. 27, 2016)
Published Print	8 years, 11 months ago (Sept. 26, 2016)

Funders 1

European Commission 10.13039/501100000780
Region: Europe
gov (National government)
Labels26
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2. Comisión Europea
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10. Choimisiúin Eorpaigh
11. Europskoj komisiji
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Awards1
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BibTeX

@article{Brivio_2016, title={Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices}, volume={109}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4963675}, DOI={10.1063/1.4963675}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Brivio, S. and Covi, E. and Serb, A. and Prodromakis, T. and Fanciulli, M. and Spiga, S.}, year={2016}, month=sep }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T14:04:39Z",
    "timestamp": 1753884279006,
    "version": "3.41.2"
  },
  "reference-count": 34,
  "publisher": "AIP Publishing",
  "issue": "13",
  "funder": [
    {
      "DOI": "10.13039/501100000780",
      "name": "European Commission",
      "doi-asserted-by": "publisher",
      "award": [
        "612058"
      ],
      "id": [
        {
          "id": "10.13039/501100000780",
          "id-type": "DOI",
          "asserted-by": "publisher"
        }
      ]
    }
  ],
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2016,
        9,
        26
      ]
    ]
  },
  "abstract": "<jats:p>The resistance switching dynamics of TiN/HfO2/Pt devices is analyzed in this paper. When biased with a voltage ramp of appropriate polarity, the devices experience SET transitions from high to low resistance states in an abrupt manner, which allows identifying a threshold voltage. However, we find that the stimulation with trains of identical pulses at voltages near the threshold results in a gradual SET transition, whereby the resistive state visits a continuum of intermediate levels as it approaches some low resistance state limit. On the contrary, RESET transitions from low to high resistance states proceed in a gradual way under voltage ramp stimulation, while gradual resistance changes driven by trains of identical spikes cover only a limited resistance window. The results are discussed in terms of the relations among the thermo-electrochemical effects of Joule heating, ion mobility, and resistance change, which provide positive and negative closed loop processes in SET and RESET, respectively. Furthermore, the effect of the competition between opposite tendencies of filament dissolution and formation at opposite metal/HfO2 interfaces is discussed as an additional ingredient affecting the switching dynamics.</jats:p>",
  "DOI": "10.1063/1.4963675",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2016,
        9,
        27
      ]
    ],
    "date-time": "2016-09-27T17:00:21Z",
    "timestamp": 1474995621000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 50,
  "title": "Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices",
  "prefix": "10.1063",
  "volume": "109",
  "author": [
    {
      "ORCID": "https://orcid.org/0000-0003-2386-7953",
      "authenticated-orcid": false,
      "given": "S.",
      "family": "Brivio",
      "sequence": "first",
      "affiliation": [
        {
          "name": "IMM\u2013CNR 1 Laboratorio MDM, , via C. Olivetti 2, 20864 Agrate Brianza, Italy"
        }
      ]
    },
    {
      "ORCID": "https://orcid.org/0000-0003-0479-6897",
      "authenticated-orcid": false,
      "given": "E.",
      "family": "Covi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IMM\u2013CNR 1 Laboratorio MDM, , via C. Olivetti 2, 20864 Agrate Brianza, Italy"
        }
      ]
    },
    {
      "given": "A.",
      "family": "Serb",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Southampton 2 Nano Group, Department of Electronics and Computer Science, , SO17 1BJ Southampton, United Kingdom"
        }
      ]
    },
    {
      "given": "T.",
      "family": "Prodromakis",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Southampton 2 Nano Group, Department of Electronics and Computer Science, , SO17 1BJ Southampton, United Kingdom"
        }
      ]
    },
    {
      "ORCID": "https://orcid.org/0000-0003-2951-0859",
      "authenticated-orcid": false,
      "given": "M.",
      "family": "Fanciulli",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IMM\u2013CNR 1 Laboratorio MDM, , via C. Olivetti 2, 20864 Agrate Brianza, Italy"
        },
        {
          "name": "Universit\u00e0 di Milano Bicocca 3 Dipartimento di Scienza dei Materiali, , Via R. Cozzi 53, 20126 Milano (MI), Italy"
        }
      ]
    },
    {
      "ORCID": "https://orcid.org/0000-0001-7293-7503",
      "authenticated-orcid": false,
      "given": "S.",
      "family": "Spiga",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IMM\u2013CNR 1 Laboratorio MDM, , via C. Olivetti 2, 20864 Agrate Brianza, Italy"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2016,
        9,
        27
      ]
    ]
  },
  "reference": [
    {
      "key": "2023061802090905200_c1",
      "doi-asserted-by": "publisher",
      "first-page": "209",
      "DOI": "10.1109/PROC.1976.10092",
      "volume": "64",
      "year": "1976",
      "journal-title": "Proc. IEEE"
    },
    {
      "key": "2023061802090905200_c2",
      "doi-asserted-by": "publisher",
      "first-page": "765",
      "DOI": "10.1007/s00339-011-6264-9",
      "volume": "102",
      "year": "2011",
      "journal-title": "Appl. Phys. A"
    },
    {
      "key": "2023061802090905200_c3",
      "doi-asserted-by": "publisher",
      "first-page": "13",
      "DOI": "10.1038/nnano.2012.240",
      "volume": "8",
      "year": "2013",
      "journal-title": "Nat. Nanotechnol."
    },
    {
      "key": "2023061802090905200_c4",
      "unstructured": "I.\u2008Gupta, A.\u2008Serb, A.\u2008Khiat, R.\u2008Zeitler, S.\u2008Vassanelli, and T.\u2008Prodromakis, e-print arXiv:1507.06832 [cs.ET]."
    },
    {
      "key": "2023061802090905200_c5",
      "doi-asserted-by": "publisher",
      "first-page": "41",
      "DOI": "10.1016/j.mee.2015.04.052",
      "volume": "147",
      "year": "2015",
      "journal-title": "Microelectron. Eng."
    },
    {
      "first-page": "393",
      "volume-title": "Proceedings of 2016 IEEE International Symposium on Circuits and Systems (ISCAS) Montreal, CA, 22\u201325 May 2016",
      "key": "2023061802090905200_c6",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/ISCAS.2016.7527253"
    },
    {
      "key": "2023061802090905200_c7",
      "doi-asserted-by": "publisher",
      "first-page": "941",
      "DOI": "10.1021/nn506735m",
      "volume": "9",
      "year": "2015",
      "journal-title": "ACS Nano"
    },
    {
      "key": "2023061802090905200_c8",
      "doi-asserted-by": "publisher",
      "first-page": "18639",
      "DOI": "10.1038/srep18639",
      "volume": "6",
      "year": "2016",
      "journal-title": "Sci. Rep."
    },
    {
      "key": "2023061802090905200_c9",
      "doi-asserted-by": "publisher",
      "first-page": "7669",
      "DOI": "10.1021/nn202983n",
      "volume": "5",
      "year": "2011",
      "journal-title": "ACS Nano"
    },
    {
      "key": "2023061802090905200_c10",
      "doi-asserted-by": "publisher",
      "first-page": "6306",
      "DOI": "10.1002/adfm.201500825",
      "volume": "25",
      "year": "2015",
      "journal-title": "Adv. Funct. Mater."
    },
    {
      "key": "2023061802090905200_c11",
      "doi-asserted-by": "publisher",
      "first-page": "2203",
      "DOI": "10.1021/acs.nanolett.5b00697",
      "volume": "15",
      "year": "2015",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023061802090905200_c12",
      "doi-asserted-by": "publisher",
      "first-page": "4290",
      "DOI": "10.1002/adfm.201501427",
      "volume": "25",
      "year": "2015",
      "journal-title": "Adv. Funct. Mater."
    },
    {
      "key": "2023061802090905200_c13",
      "doi-asserted-by": "publisher",
      "first-page": "1500233",
      "DOI": "10.1002/aelm.201500233",
      "volume": "2",
      "year": "2015",
      "journal-title": "Adv. Electron. Mater."
    },
    {
      "key": "2023061802090905200_c14",
      "doi-asserted-by": "publisher",
      "first-page": "186",
      "DOI": "10.3389/fnins.2013.00186",
      "volume": "7",
      "year": "2013",
      "journal-title": "Front. Neurosci."
    },
    {
      "key": "2023061802090905200_c15",
      "doi-asserted-by": "publisher",
      "first-page": "10123",
      "DOI": "10.1038/srep10123",
      "volume": "5",
      "year": "2015",
      "journal-title": "Sci. Rep."
    },
    {
      "key": "2023061802090905200_c16",
      "doi-asserted-by": "publisher",
      "first-page": "2494",
      "DOI": "10.1109/TED.2015.2440102",
      "volume": "62",
      "year": "2015",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2023061802090905200_c17",
      "doi-asserted-by": "publisher",
      "first-page": "1774",
      "DOI": "10.1002/adma.201203680",
      "volume": "25",
      "year": "2013",
      "journal-title": "Adv. Mater."
    },
    {
      "key": "2023061802090905200_c18",
      "doi-asserted-by": "publisher",
      "first-page": "3169",
      "DOI": "10.1039/c2ra22507g",
      "volume": "3",
      "year": "2013",
      "journal-title": "RSC Adv."
    },
    {
      "key": "2023061802090905200_c19",
      "doi-asserted-by": "publisher",
      "first-page": "44901",
      "DOI": "10.1063/1.4905792",
      "volume": "117",
      "year": "2015",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023061802090905200_c20",
      "doi-asserted-by": "publisher",
      "first-page": "47",
      "DOI": "10.1016/j.pnsc.2015.01.005",
      "volume": "25",
      "year": "2015",
      "journal-title": "Prog. Nat. Sci.: Mater. Int."
    },
    {
      "key": "2023061802090905200_c21",
      "doi-asserted-by": "publisher",
      "first-page": "104",
      "DOI": "10.1016/j.mee.2015.04.043",
      "volume": "147",
      "year": "2015",
      "journal-title": "Microelectron. Eng."
    },
    {
      "key": "2023061802090905200_c22",
      "doi-asserted-by": "publisher",
      "first-page": "2518",
      "DOI": "10.1021/nn505131b",
      "volume": "9",
      "year": "2015",
      "journal-title": "ACS Nano"
    },
    {
      "first-page": "1",
      "volume-title": "2015 International Conference On Memristive Systems, MEMRISYS, 2015",
      "key": "2023061802090905200_c23",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/MEMRISYS.2015.7378383"
    },
    {
      "key": "2023061802090905200_c24",
      "doi-asserted-by": "publisher",
      "first-page": "385705",
      "DOI": "10.1088/0957-4484/25/38/385705",
      "volume": "25",
      "year": "2014",
      "journal-title": "Nanotechnology"
    },
    {
      "key": "2023061802090905200_c25",
      "doi-asserted-by": "publisher",
      "first-page": "P63",
      "DOI": "10.1149/2.003204ssl",
      "volume": "1",
      "year": "2012",
      "journal-title": "ECS Solid State Lett."
    },
    {
      "key": "2023061802090905200_c26",
      "doi-asserted-by": "publisher",
      "first-page": "53504",
      "DOI": "10.1063/1.4941287",
      "volume": "108",
      "year": "2016",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023061802090905200_c27",
      "doi-asserted-by": "publisher",
      "first-page": "23504",
      "DOI": "10.1063/1.4926340",
      "volume": "107",
      "year": "2015",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023061802090905200_c28",
      "doi-asserted-by": "publisher",
      "first-page": "2190",
      "DOI": "10.1109/TED.2015.2433676",
      "volume": "62",
      "year": "2015",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2023061802090905200_c29",
      "doi-asserted-by": "publisher",
      "first-page": "34101",
      "DOI": "10.7567/APEX.7.034101",
      "volume": "7",
      "year": "2014",
      "journal-title": "Appl. Phys. Express"
    },
    {
      "key": "2023061802090905200_c30",
      "doi-asserted-by": "publisher",
      "first-page": "2378",
      "DOI": "10.1109/TED.2014.2325531",
      "volume": "61",
      "year": "2014",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2023061802090905200_c31",
      "doi-asserted-by": "publisher",
      "first-page": "1998",
      "DOI": "10.1109/TED.2015.2418114",
      "volume": "62",
      "year": "2015",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2023061802090905200_c32",
      "doi-asserted-by": "publisher",
      "first-page": "5698",
      "DOI": "10.1039/c4nr00500g",
      "volume": "6",
      "year": "2014",
      "journal-title": "Nanoscale"
    },
    {
      "key": "2023061802090905200_c33",
      "doi-asserted-by": "publisher",
      "first-page": "4487",
      "DOI": "10.1002/adfm.201101117",
      "volume": "21",
      "year": "2011",
      "journal-title": "Adv. Funct. Mater."
    },
    {
      "year": "2010",
      "key": "2023061802090905200_c34",
      "first-page": "1145"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4963675/14488794/133504_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4963675/14488794/133504_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        6,
        18
      ]
    ],
    "date-time": "2023-06-18T02:09:17Z",
    "timestamp": 1687054157000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/109/13/133504/32329/Experimental-study-of-gradual-abrupt-dynamics-of"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2016,
        9,
        26
      ]
    ]
  },
  "references-count": 34,
  "journal-issue": {
    "issue": "13",
    "published-print": {
      "date-parts": [
        [
          2016,
          9,
          26
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.4963675",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2016,
        9,
        26
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2016,
        9,
        26
      ]
    ]
  },
  "article-number": "133504"
}