DOI: 10.1063/1.4954223. Chemical free device fabrication of two dimensional van der Waals materials based transistors by using one-off stamping

Chemical free device fabrication of two dimensional van der Waals materials based transistors by using one-off stamping

10.1063/1.4954223

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report on a chemical free one-off imprinting method to fabricate two dimensional (2D) van der Waals (vdWs) materials based transistors. Such one-off imprinting technique is the simplest and effective way to prevent unintentional chemical reaction or damage of 2D vdWs active channel during device fabrication process. 2D MoS2 nanosheets based transistors with a hexagonal-boron-nitride (h-BN) passivation layer, prepared by one-off imprinting, show negligible variations of transfer characteristics after chemical vapor deposition process. In addition, this method enables the fabrication of all 2D MoS2 transistors consisting of h-BN gate insulator, and graphene source/drain and gate electrodes without any chemical damage.

Bibliography

Lee, Y. T., Choi, W. K., & Hwang, D. K. (2016). Chemical free device fabrication of two dimensional van der Waals materials based transistors by using one-off stamping. Applied Physics Letters, 108(25).

Authors 3

Young Tack Lee (first)
Won Kook Choi (additional)
Do Kyung Hwang (additional)

References 23 Referenced 14

10.1126/science.1102896 / Science (2004)
10.1021/nl9039636 / Nano Lett. (2010)
10.1039/c2nr30994g / Nanoscale (2012)
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10.1021/nl204481s / Nano Lett. (2012)
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10.1002/smll.201303908 / Small (2014)
10.1021/nl301702r / Nano Lett. (2012)
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10.1021/nn501723y / ACS Nano (2014)
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10.1038/nnano.2013.30 / Nat. Nanotechnol. (2013)
10.1038/nnano.2013.31 / Nat. Nanotechnol. (2013)
See supplementary material at http://dx.doi.org/10.1063/1.4954223 for preparation process of one-off imprinting method (Fig. S1), OM images of h-BN transferring process (Fig. S2), electrical properties of MoS2 FET without h-BN passivation layer (Fig. S3), and with h-BN passivation layer (Fig. S4) and OM images of one-off imprinting process (Fig. S5).
10.1039/C4TC02961E / J. Mater. Chem. C (2015)
10.1063/1.4848235 / Appl. Phys. Lett. (2013)
10.1109/LED.2015.2481388 / IEEE Electron Device Lett. (2015)
10.1021/nl202239c / Nano Lett. (2011)
10.1039/C5NR00253B / Nanoscales (2015)
10.1039/C4NR06707J / Nanoscales (2015)

Dates

Type	When
Created	9 years, 2 months ago (June 21, 2016, 5:24 p.m.)
Deposited	2 years, 2 months ago (June 17, 2023, 1:29 p.m.)
Indexed	1 month ago (July 30, 2025, 7:06 a.m.)
Issued	9 years, 2 months ago (June 20, 2016)
Published	9 years, 2 months ago (June 20, 2016)
Published Online	9 years, 2 months ago (June 20, 2016)
Published Print	9 years, 2 months ago (June 20, 2016)

Funders 1

Korea Institute of Science and Technology 10.13039/501100003693
Region: Asia
gov (Local government)
Labels1
1. KIST
Awards2
1. 2E26420
2. 2E26390

BibTeX

@article{Lee_2016, title={Chemical free device fabrication of two dimensional van der Waals materials based transistors by using one-off stamping}, volume={108}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4954223}, DOI={10.1063/1.4954223}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lee, Young Tack and Choi, Won Kook and Hwang, Do Kyung}, year={2016}, month=jun }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T11:06:54Z",
    "timestamp": 1753873614497,
    "version": "3.41.2"
  },
  "reference-count": 23,
  "publisher": "AIP Publishing",
  "issue": "25",
  "funder": [
    {
      "DOI": "10.13039/501100003693",
      "name": "Korea Institute of Science and Technology",
      "doi-asserted-by": "publisher",
      "award": [
        "2E26390",
        "2E26420"
      ],
      "id": [
        {
          "id": "10.13039/501100003693",
          "id-type": "DOI",
          "asserted-by": "publisher"
        }
      ]
    }
  ],
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2016,
        6,
        20
      ]
    ]
  },
  "abstract": "<jats:p>We report on a chemical free one-off imprinting method to fabricate two dimensional (2D) van der Waals (vdWs) materials based transistors. Such one-off imprinting technique is the simplest and effective way to prevent unintentional chemical reaction or damage of 2D vdWs active channel during device fabrication process. 2D MoS2 nanosheets based transistors with a hexagonal-boron-nitride (h-BN) passivation layer, prepared by one-off imprinting, show negligible variations of transfer characteristics after chemical vapor deposition process. In addition, this method enables the fabrication of all 2D MoS2 transistors consisting of h-BN gate insulator, and graphene source/drain and gate electrodes without any chemical damage.</jats:p>",
  "DOI": "10.1063/1.4954223",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2016,
        6,
        21
      ]
    ],
    "date-time": "2016-06-21T21:24:58Z",
    "timestamp": 1466544298000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 14,
  "title": "Chemical free device fabrication of two dimensional van der Waals materials based transistors by using one-off stamping",
  "prefix": "10.1063",
  "volume": "108",
  "author": [
    {
      "given": "Young Tack",
      "family": "Lee",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST) 1 Center of Opto-Electronic Materials and Devices, , Seoul 02792, South Korea"
        }
      ]
    },
    {
      "given": "Won Kook",
      "family": "Choi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Korea University of Science and Technology (KUST) 2 Department of Nanomaterials and Nano Science, , Daejeon 34113, South Korea"
        },
        {
          "name": "Korea Institute of Science and Technology (KIST) 3 Materials and Life Science Research Division, , Seoul 02792, South Korea"
        }
      ]
    },
    {
      "given": "Do Kyung",
      "family": "Hwang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Post-Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST) 1 Center of Opto-Electronic Materials and Devices, , Seoul 02792, South Korea"
        },
        {
          "name": "Korea University of Science and Technology (KUST) 2 Department of Nanomaterials and Nano Science, , Daejeon 34113, South Korea"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2016,
        6,
        20
      ]
    ]
  },
  "reference": [
    {
      "key": "2023061717291060300_c1",
      "doi-asserted-by": "publisher",
      "first-page": "666",
      "DOI": "10.1126/science.1102896",
      "volume": "306",
      "year": "2004",
      "journal-title": "Science"
    },
    {
      "key": "2023061717291060300_c2",
      "doi-asserted-by": "publisher",
      "first-page": "715",
      "DOI": "10.1021/nl9039636",
      "volume": "10",
      "year": "2010",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023061717291060300_c3",
      "doi-asserted-by": "publisher",
      "first-page": "4870",
      "DOI": "10.1039/c2nr30994g",
      "volume": "4",
      "year": "2012",
      "journal-title": "Nanoscale"
    },
    {
      "key": "2023061717291060300_c4",
      "doi-asserted-by": "publisher",
      "first-page": "212101",
      "DOI": "10.1063/1.4880732",
      "volume": "104",
      "year": "2014",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023061717291060300_c5",
      "doi-asserted-by": "publisher",
      "first-page": "10612",
      "DOI": "10.1021/acsnano.5b04258",
      "volume": "9",
      "year": "2015",
      "journal-title": "ACS Nano"
    },
    {
      "key": "2023061717291060300_c6",
      "doi-asserted-by": "publisher",
      "first-page": "2751",
      "DOI": "10.1021/nl204481s",
      "volume": "12",
      "year": "2012",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023061717291060300_c7",
      "doi-asserted-by": "publisher",
      "first-page": "9934",
      "DOI": "10.1021/nn203715c",
      "volume": "5",
      "year": "2011",
      "journal-title": "ACS Nano"
    },
    {
      "key": "2023061717291060300_c8",
      "doi-asserted-by": "publisher",
      "first-page": "147",
      "DOI": "10.1038/nnano.2010.279",
      "volume": "6",
      "year": "2011",
      "journal-title": "Nat. Nanotechnol."
    },
    {
      "key": "2023061717291060300_c9",
      "doi-asserted-by": "publisher",
      "first-page": "554",
      "DOI": "10.1038/nmat3633",
      "volume": "12",
      "year": "2013",
      "journal-title": "Nat. Mater."
    },
    {
      "key": "2023061717291060300_c10",
      "doi-asserted-by": "publisher",
      "first-page": "2356",
      "DOI": "10.1002/smll.201303908",
      "volume": "10",
      "year": "2014",
      "journal-title": "Small"
    },
    {
      "key": "2023061717291060300_c11",
      "doi-asserted-by": "publisher",
      "first-page": "3788",
      "DOI": "10.1021/nl301702r",
      "volume": "12",
      "year": "2012",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023061717291060300_c12",
      "doi-asserted-by": "publisher",
      "first-page": "103501",
      "DOI": "10.1063/1.4820408",
      "volume": "103",
      "year": "2013",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023061717291060300_c13",
      "doi-asserted-by": "publisher",
      "first-page": "6259",
      "DOI": "10.1021/nn501723y",
      "volume": "8",
      "year": "2014",
      "journal-title": "ACS Nano"
    },
    {
      "key": "2023061717291060300_c14",
      "doi-asserted-by": "publisher",
      "first-page": "923",
      "DOI": "10.1021/nn405719x",
      "volume": "8",
      "year": "2014",
      "journal-title": "ACS Nano"
    },
    {
      "key": "2023061717291060300_c15",
      "doi-asserted-by": "publisher",
      "first-page": "146",
      "DOI": "10.1038/nnano.2013.30",
      "volume": "8",
      "year": "2013",
      "journal-title": "Nat. Nanotechnol."
    },
    {
      "key": "2023061717291060300_c16",
      "doi-asserted-by": "publisher",
      "first-page": "147",
      "DOI": "10.1038/nnano.2013.31",
      "volume": "8",
      "year": "2013",
      "journal-title": "Nat. Nanotechnol."
    },
    {
      "key": "2023061717291060300_c17",
      "unstructured": "See supplementary material at http://dx.doi.org/10.1063/1.4954223 for preparation process of one-off imprinting method (Fig. S1), OM images of h-BN transferring process (Fig. S2), electrical properties of MoS2 FET without h-BN passivation layer (Fig. S3), and with h-BN passivation layer (Fig. S4) and OM images of one-off imprinting process (Fig. S5)."
    },
    {
      "key": "2023061717291060300_c18",
      "doi-asserted-by": "publisher",
      "first-page": "2751",
      "DOI": "10.1039/C4TC02961E",
      "volume": "3",
      "year": "2015",
      "journal-title": "J. Mater. Chem. C"
    },
    {
      "key": "2023061717291060300_c19",
      "doi-asserted-by": "publisher",
      "first-page": "243904",
      "DOI": "10.1063/1.4848235",
      "volume": "103",
      "year": "2013",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023061717291060300_c20",
      "doi-asserted-by": "publisher",
      "first-page": "1202",
      "DOI": "10.1109/LED.2015.2481388",
      "volume": "36",
      "year": "2015",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2023061717291060300_c21",
      "doi-asserted-by": "publisher",
      "first-page": "4246",
      "DOI": "10.1021/nl202239c",
      "volume": "11",
      "year": "2011",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023061717291060300_c22",
      "doi-asserted-by": "publisher",
      "first-page": "10823",
      "DOI": "10.1039/C5NR00253B",
      "volume": "7",
      "year": "2015",
      "journal-title": "Nanoscales"
    },
    {
      "key": "2023061717291060300_c23",
      "doi-asserted-by": "publisher",
      "first-page": "5617",
      "DOI": "10.1039/C4NR06707J",
      "volume": "7",
      "year": "2015",
      "journal-title": "Nanoscales"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4954223/14481283/253105_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4954223/14481283/253105_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        6,
        17
      ]
    ],
    "date-time": "2023-06-17T17:29:18Z",
    "timestamp": 1687022958000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/108/25/253105/30602/Chemical-free-device-fabrication-of-two"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2016,
        6,
        20
      ]
    ]
  },
  "references-count": 23,
  "journal-issue": {
    "issue": "25",
    "published-print": {
      "date-parts": [
        [
          2016,
          6,
          20
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.4954223",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2016,
        6,
        20
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2016,
        6,
        20
      ]
    ]
  },
  "article-number": "253105"
}