DOI: 10.1063/1.4948536. A two-step process for growth of highly oriented Sb2Te3 using sputtering

A two-step process for growth of highly oriented Sb2Te3 using sputtering

10.1063/1.4948536

Crossref journal-article

AIP Publishing

AIP Advances (317)

Abstract

A two-step growth method is proposed for the fabrication of highly-oriented Sb2Te3 and related superlattice films using sputtering. We report that the quality and grain size of Sb2Te3 as well as GeTe/Sb2Te3 superlattice films strongly depend on the thickness of the room-temperature deposited and subsequently by annealing at 523 K Sb2Te3 seed layer. This result may open up new possibilities for the fabrication of two-dimensional electronic devices using layered chalcogenides.

Bibliography

Saito, Y., Fons, P., Bolotov, L., Miyata, N., Kolobov, A. V., & Tominaga, J. (2016). A two-step process for growth of highly oriented Sb2Te3 using sputtering. AIP Advances, 6(4).

Authors 6

Yuta Saito (first)
Paul Fons (additional)
Leonid Bolotov (additional)
Noriyuki Miyata (additional)
Alexander V. Kolobov (additional)
Junji Tominaga (additional)

References 26 Referenced 49

10.1038/nature12385 / Nature (2013)
10.1021/nn400280c / ACS Nano (2013)
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10.1103/PhysRevLett.103.146401 / Phys. Rev. Lett. (2009)
10.1126/science.1173034 / Science (2009)
10.1103/RevModPhys.82.3045 / Rev. Mod. Phys (2010)
10.1103/PhysRevLett.108.016401 / Phys. Rev. Lett. (2012)
10.1038/nmat2009 / Nat. Mater. (2007)
10.1126/science.1156446 / Science (2008)
10.1038/nnano.2011.96 / Nat. Nanotech. (2011)
10.1063/1.3651275 / Appl. Phys. Lett. (2011)
10.1038/srep05727 / Sci. Rep. (2014)
10.1002/admi.201300027 / Adv. Mat. Interfaces (2014)
10.1088/1468-6996/16/1/014402 / Sci. Technol. Adv. Mater. (2015)
10.1021/nn300503e / ACS Nano (2012)
{'year': '2012', 'key': '2023061800241373600_c17'} (2012)
10.1021/nl204562j / Nano Lett. (2012)
10.1021/nl5011492 / Nano Lett. (2014)
10.1039/C5NR04530D / Nanoscale (2015)
10.1038/srep18079 / Sci. Rep. (2015)
10.1002/pssb.201552335 / Phys. Stat. Sol. (b) (2015)
10.1088/1367-2630/12/10/103038 / New J. Phys. (2010)
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Dates

Type	When
Created	9 years, 4 months ago (April 28, 2016, 2:04 p.m.)
Deposited	3 months ago (June 3, 2025, 2:21 p.m.)
Indexed	1 month ago (Aug. 2, 2025, 1:01 a.m.)
Issued	9 years, 5 months ago (April 1, 2016)
Published	9 years, 5 months ago (April 1, 2016)
Published Online	9 years, 4 months ago (April 28, 2016)
Published Print	9 years, 5 months ago (April 1, 2016)

Funders 1

Core Research for Evolutional Science and Technology, Japan Science and Technology Agency 10.13039/501100003382 Core Research for Evolutional Science and Technology
Region: Asia
gov (Local government)
Labels3
1. Core Research for Evolutionary Science and Technology
2. 進化科学技術のコア研究
3. CREST

BibTeX

@article{Saito_2016, title={A two-step process for growth of highly oriented Sb2Te3 using sputtering}, volume={6}, ISSN={2158-3226}, url={http://dx.doi.org/10.1063/1.4948536}, DOI={10.1063/1.4948536}, number={4}, journal={AIP Advances}, publisher={AIP Publishing}, author={Saito, Yuta and Fons, Paul and Bolotov, Leonid and Miyata, Noriyuki and Kolobov, Alexander V. and Tominaga, Junji}, year={2016}, month=apr }

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