DOI: 10.1063/1.4943140. Visualization of trapped charges being ejected from organic thin-film transistor channels by Kelvin-probe force microscopy during gate voltage sweeps

Visualization of trapped charges being ejected from organic thin-film transistor channels by Kelvin-probe force microscopy during gate voltage sweeps

10.1063/1.4943140

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Kelvin-probe force microscopy (KFM) has been widely used to evaluate the localized charge trap states in the organic thin-film transistor (OTFT) channels. However, applicability of the KFM has been limited to the trapped charges whose lifetime is typically longer than several minutes because of the temporal resolution of the KFM. Therefore, it has not long been employed for studying the dynamics of the trapped charges in the OTFTs. Here, we demonstrate a method to visualize the transient distribution of the trapped charge carriers in operating OTFTs. The method allows visualizing the dynamics of the trapped charges during the gate voltage sweeps on a time scale of several hundreds of milliseconds. The experimental results performed on dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) OTFTs indicate that, immediately after a bias voltage applied to a device was turned off, the primary discharging of the channel region around the electrode edges started and it limited the ejection process of the remaining accumulated charges to the electrodes, resulting in an increased density of long-lived trapped charges in a region distant from the electrodes. The presented results suggest that the method is useful to study the electrical connections at the interface between the DNTT grains and electrodes, or those between the grains.

Bibliography

Yamagishi, Y., Kobayashi, K., Noda, K., & Yamada, H. (2016). Visualization of trapped charges being ejected from organic thin-film transistor channels by Kelvin-probe force microscopy during gate voltage sweeps. Applied Physics Letters, 108(9).

Authors 4

Yuji Yamagishi (first)
Kei Kobayashi (additional)
Kei Noda (additional)
Hirofumi Yamada (additional)

References 23 Referenced 14

10.1002/adma.200501152 / Adv. Mater. (2005)
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10.1063/1.4901946 / Appl. Phys. Lett. (2014)
See supplementary material at http://dx.doi.org/10.1063/1.4943140 for additional experimental results. In Fig. S1, we show the histogram analysis. In Fig. S2, we show how the bias stress effect observed in the ΔVth image was calibrated. In Fig. S3, the VSP–VG characteristics measured with different bias sweep times is presented.
10.1063/1.2754350 / Appl. Phys. Lett. (2007)
10.1063/1.2917523 / Appl. Phys. Lett. (2008)
10.1103/PhysRevB.71.125424 / Phys. Rev. B (2005)
10.1103/PhysRevB.77.235427 / Phys. Rev. B (2008)
{'year': '2013', 'key': '2023061723515283600_c23'} (2013)

Dates

Type	When
Created	9 years, 5 months ago (March 2, 2016, 1 p.m.)
Deposited	2 years, 2 months ago (June 17, 2023, 7:52 p.m.)
Indexed	1 month ago (July 30, 2025, 7:06 a.m.)
Issued	9 years, 6 months ago (Feb. 29, 2016)
Published	9 years, 6 months ago (Feb. 29, 2016)
Published Online	9 years, 6 months ago (March 2, 2016)
Published Print	9 years, 6 months ago (Feb. 29, 2016)

Funders 0

None

BibTeX

@article{Yamagishi_2016, title={Visualization of trapped charges being ejected from organic thin-film transistor channels by Kelvin-probe force microscopy during gate voltage sweeps}, volume={108}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4943140}, DOI={10.1063/1.4943140}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yamagishi, Yuji and Kobayashi, Kei and Noda, Kei and Yamada, Hirofumi}, year={2016}, month=feb }

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