DOI: 10.1063/1.4943022. Multiferroic tunnel junction of Ni50.3Mn36.9Sb12.8/BiFeO3/Ni50.3Mn36.9Sb12.8 for magneto-electric random access memory devices

Multiferroic tunnel junction of Ni50.3Mn36.9Sb12.8/BiFeO3/Ni50.3Mn36.9Sb12.8 for magneto-electric random access memory devices

10.1063/1.4943022

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A multiferroic tunnel junction composed of two ferromagnetic shape memory alloy electrodes separated by a multiferroic barrier was fabricated from a Ni50.3Mn36.9Sb12.8/BiFeO3/Ni50.3Mn36.9Sb12.8 trilayer. A large exchange bias field (HEB) of ∼59 Oe at room temperature was found for this trilayer. Besides the exchange bias effect in this multiferroic tunnel junction, one of the most interesting results was the magnetoelectric effect, which is manifested by the transfer of strain from the Ni50.3Mn36.9Sb12.8 electrodes to the BiFeO3 tunnel barrier. The magnetic field dependence of the junction resistance was observed at room temperature after aligning the ferroelectric polarization of the BiFeO3 barrier with the poling voltage of ±3 V. A change in junction resistance was also observed between the magnetic parallel and antiparallel states of the electrodes, suggesting an entire flip of the magnetic domains against the magnetic field. After reversing the polarization of the BiFeO3 barrier between the two directions, the entire R-H curve was shifted so that both parallel and antiparallel resistances switched to different values. Hence, after applying positive and negative voltages, two parallel and two antiparallel states, i.e., four distinct states were observed. These four states will encode quaternary information by both ferromagnetic and ferroelectric order-parameters, to read non-destructively by resistance measurement. These findings may be helpful towards reconfigurable logic spintronics architectures in next generation magneto-electric random access memory devices.

Bibliography

Barman, R., & Kaur, D. (2016). Multiferroic tunnel junction of Ni50.3Mn36.9Sb12.8/BiFeO3/Ni50.3Mn36.9Sb12.8 for magneto-electric random access memory devices. Applied Physics Letters, 108(9).

Authors 2

Rahul Barman (first)
Davinder Kaur (additional)

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Dates

Type	When
Created	9 years, 5 months ago (March 2, 2016, 1 p.m.)
Deposited	2 years, 2 months ago (June 17, 2023, 7:52 p.m.)
Indexed	1 week, 3 days ago (Aug. 19, 2025, 6:10 a.m.)
Issued	9 years, 6 months ago (Feb. 29, 2016)
Published	9 years, 6 months ago (Feb. 29, 2016)
Published Online	9 years, 5 months ago (March 2, 2016)
Published Print	9 years, 6 months ago (Feb. 29, 2016)

Funders 2

Defence Research and Development Organisation 10.13039/501100001849
Region: Asia
gov (National government)
Labels7
1. रक्षा अनुसंधान एवं विकास संगठन
2. DRDO_India
3. DRDO | New Delhi
4. Defence Research & Development Organisation
5. DEFENSE RESEARCH & DEVELOPMENT ORGANISATION, INDIA
6. DRDO, Ministry of Defence, Government of India
7. DRDO
Awards1
1. ERIP/ER/1100406/M/01/1439
Ministry of Human Resource Development 10.13039/501100004541 Ministry of Education, India
Region: Asia
gov (National government)
Labels11
1. Ministry of Human Resource Development
2. Ministry of Education, Government of India
3. शिक्षा मंत्रालय
4. Ministry of Human Resource Development, Government of India
5. EduMinOfIndia
6. Ministry of Human Resource and Development
7. शिक्षा मंत्रालय, भारत सरकार
8. Ministry of Education of India
9. hrdministry
10. MHRD
11. MoE

BibTeX

@article{Barman_2016, title={Multiferroic tunnel junction of Ni50.3Mn36.9Sb12.8/BiFeO3/Ni50.3Mn36.9Sb12.8 for magneto-electric random access memory devices}, volume={108}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4943022}, DOI={10.1063/1.4943022}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Barman, Rahul and Kaur, Davinder}, year={2016}, month=feb }

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