DOI: 10.1063/1.4939131. Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

10.1063/1.4939131

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO2, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.

Bibliography

Ji, Y., Pan, C., Zhang, M., Long, S., Lian, X., Miao, F., Hui, F., Shi, Y., Larcher, L., Wu, E., & Lanza, M. (2016). Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown. Applied Physics Letters, 108(1).

Authors 11

Yanfeng Ji (first)
Chengbin Pan (additional)
Meiyun Zhang (additional)
Shibing Long (additional)
Xiaojuan Lian (additional)
Feng Miao (additional)
Fei Hui (additional)
Yuanyuan Shi (additional)
Luca Larcher (additional)
Ernest Wu (additional)
Mario Lanza (additional)

References 41 Referenced 106

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10.1038/ncomms3541 / Nat. Commun. (2013)
10.1021/nn500059s / ACS Nano (2014)
10.1007/s12274-013-0336-4 / Nano Res. (2013)
10.1021/nn402954e / ACS Nano (2013)
10.1038/srep06146 / Sci. Rep. / Enhanced tunnel spin injection into graphene using chemical vapor deposited hexagonal boron nitride (2014)
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10.1021/nn301675f / ACS Nano (2012)
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See supplementary material at http://dx.doi.org/10.1063/1.4939131 for: (i) dielectric strength of BN in the literatures, (ii) statistical analysis of the insulating (multilayer) areas in the CAFM current maps, and (iii) simulation of tunneling current through atomically thin BN films.
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Dates

Type	When
Created	9 years, 7 months ago (Jan. 6, 2016, 1 p.m.)
Deposited	2 years, 2 months ago (June 17, 2023, 11:15 a.m.)
Indexed	4 weeks, 1 day ago (July 30, 2025, 7:06 a.m.)
Issued	9 years, 7 months ago (Jan. 4, 2016)
Published	9 years, 7 months ago (Jan. 4, 2016)
Published Online	9 years, 7 months ago (Jan. 6, 2016)
Published Print	9 years, 7 months ago (Jan. 4, 2016)

Funders 6

Major State Basic Research Development Program of China 10.13039/501100012336
Awards1
1. 2011CB013101
Priority Academic Program Development of Jiangsu Higher Education Institutions 10.13039/501100012246
Region: Asia
gov (Local government)
Labels1
1. PAPD
Young 1000 Talent Program of China
Young 973 National Program of the Chinese Ministry of Science and Technology
Awards1
1. 2015CB932700
National Natural Science Foundation of China 10.13039/501100001809
Region: Asia
gov (National government)
Labels11
1. Chinese National Science Foundation
2. Natural Science Foundation of China
3. National Science Foundation of China
4. NNSF of China
5. NSF of China
6. 国家自然科学基金委员会
7. National Nature Science Foundation of China
8. Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
9. NSFC
10. NNSF
11. NNSFC
Awards4
1. 10872003
2. 11225208
3. 11172001
4. 10932001
National Nanotechnology Center 10.13039/501100007056
Region: Asia
gov (National government)
Labels1
1. NANOTEC
Awards1
1. 11072230

BibTeX

@article{Ji_2016, title={Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown}, volume={108}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4939131}, DOI={10.1063/1.4939131}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ji, Yanfeng and Pan, Chengbin and Zhang, Meiyun and Long, Shibing and Lian, Xiaojuan and Miao, Feng and Hui, Fei and Shi, Yuanyuan and Larcher, Luca and Wu, Ernest and Lanza, Mario}, year={2016}, month=jan }

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