Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using a self-consistent description of the device's electrostatic configuration, we relate the current to three distinct tunable voltages across the system and hence produce a two-dimensional map of the I-V characteristics in the low energy regime. We show that the use of gates on either side of the heterostructure offers a fine degree of control over the device's rich array of characteristics, as does varying the twist between the graphene electrodes.

Bibliography

Lane, T. L. M., Wallbank, J. R., & Fal’ko, V. I. (2015). Twist-controlled resonant tunnelling between monolayer and bilayer graphene. Applied Physics Letters, 107(20).

Authors 3
  1. T. L. M. Lane (first)
  2. J. R. Wallbank (additional)
  3. V. I. Fal'ko (additional)
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Dates
Type When
Created 9 years, 9 months ago (Nov. 17, 2015, 1 p.m.)
Deposited 3 months, 1 week ago (May 29, 2025, 2:05 p.m.)
Indexed 1 month, 1 week ago (July 30, 2025, 7:06 a.m.)
Issued 9 years, 9 months ago (Nov. 16, 2015)
Published 9 years, 9 months ago (Nov. 16, 2015)
Published Online 9 years, 9 months ago (Nov. 17, 2015)
Published Print 9 years, 9 months ago (Nov. 16, 2015)
Funders 2
  1. CDT NoWNano
  2. EU Graphene Flagship Programme

@article{Lane_2015, title={Twist-controlled resonant tunnelling between monolayer and bilayer graphene}, volume={107}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4935988}, DOI={10.1063/1.4935988}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lane, T. L. M. and Wallbank, J. R. and Fal’ko, V. I.}, year={2015}, month=nov }