Abstract
We predict enormous, anisotropic piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe, and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their piezoelectric coefficients are about one to two orders of magnitude larger than those of other 2D materials, such as MoS2 and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique “puckered” C2v symmetry and electronic structure of monolayer group IV monochalcogenides. Given the achieved experimental advances in the fabrication of monolayers, their flexible character, and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.
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Dates
Type | When |
---|---|
Created | 9 years, 10 months ago (Oct. 27, 2015, 6:22 p.m.) |
Deposited | 2 years, 2 months ago (June 17, 2023, 12:27 p.m.) |
Indexed | 17 hours, 16 minutes ago (Sept. 3, 2025, 6:23 a.m.) |
Issued | 9 years, 10 months ago (Oct. 26, 2015) |
Published | 9 years, 10 months ago (Oct. 26, 2015) |
Published Online | 9 years, 10 months ago (Oct. 27, 2015) |
Published Print | 9 years, 10 months ago (Oct. 26, 2015) |
Funders
1
National Science Foundation
10.13039/100000001
Region: Americas
gov (National government)
Labels
4
- U.S. National Science Foundation
- NSF
- US NSF
- USA NSF
Awards
4
- DMR-1207141
- DMR-1410636
- DMR-1455346
- DMR-1120901
@article{Fei_2015, title={Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS}, volume={107}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4934750}, DOI={10.1063/1.4934750}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Fei, Ruixiang and Li, Wenbin and Li, Ju and Yang, Li}, year={2015}, month=oct }