DOI: 10.1063/1.4931621. A WSe2/MoSe2 heterostructure photovoltaic device

A WSe2/MoSe2 heterostructure photovoltaic device

10.1063/1.4931621

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report on the photovoltaic effect in a WSe2/MoSe2 heterojunction, demonstrating gate tunable current rectification with on/off ratios of over 104. Spatially resolved photocurrent maps show the photovoltaic effect to originate from the entire overlap region. Compared to WSe2/MoS2 heterostructures, our devices perform better at long wavelengths and yield higher quantum efficiencies, in agreement with Shockley-Queisser theory.

Bibliography

FlÃ¶ry, N., Jain, A., Bharadwaj, P., Parzefall, M., Taniguchi, T., Watanabe, K., & Novotny, L. (2015). A WSe2/MoSe2 heterostructure photovoltaic device. Applied Physics Letters, 107(12).

Authors 7

Nikolaus Flöry (first)
Achint Jain (additional)
Palash Bharadwaj (additional)
Markus Parzefall (additional)
Takashi Taniguchi (additional)
Kenji Watanabe (additional)
Lukas Novotny (additional)

References 11 Referenced 148

10.1021/nl501962c / Nano Lett. / Photovoltaic effect in an electrically tunable van der Waals heterojunction (2014)
10.1038/nnano.2014.150 / Nat. Nanotechnol. / Atomically thin p-n junctions with van der Waals heterointerfaces (2014)
10.1021/nl502075n / Nano Lett. / Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction pn diodes (2014)
10.1073/pnas.1405435111 / Proc. Natl. Acad. Sci. U.S.A. / Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides (2014)
10.1021/nl302584w / Nano Lett. / Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2 (2012)
10.1140/epjb/e2012-30070-x / Eur. Phys. J. B / Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: New direct band gap semiconductors (2012)
10.1038/ncomms7242 / Nat. Commun. / Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures (2015)
10.1021/nl301702r / Nano Lett. / High-performance single layered WSe2 p-FETs with chemically doped contacts (2012)
10.1021/nn507278b / ACS Nano / Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors (2015)
10.1126/science.aab4097 / Science / Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface (2015)
10.1021/acs.nanolett.5b02423 / Nano Lett. / Two-step growth of two-dimensional WSe2/MoSe2 heterostructures (2015)

Dates

Type	When
Created	9 years, 11 months ago (Sept. 23, 2015, 1 p.m.)
Deposited	2 years, 2 months ago (June 17, 2023, 2:46 p.m.)
Indexed	1 week, 3 days ago (Aug. 23, 2025, 9:36 p.m.)
Issued	9 years, 11 months ago (Sept. 21, 2015)
Published	9 years, 11 months ago (Sept. 21, 2015)
Published Online	9 years, 11 months ago (Sept. 22, 2015)
Published Print	9 years, 11 months ago (Sept. 21, 2015)

Funders 1

Schweizerische Nationalfonds zur Förderung der Wissenschaftlichen Forschung 10.13039/501100001711 Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
Region: Europe
pri (Trusts, charities, foundations (both public and private))
Labels10
1. Schweizerischer Nationalfonds
2. Swiss National Science Foundation
3. Fonds National Suisse de la Recherche Scientifique
4. Fondo Nazionale Svizzero per la Ricerca Scientifica
5. Fonds National Suisse
6. Fondo Nazionale Svizzero
7. Schweizerische Nationalfonds
8. SNF
9. SNSF
10. FNS
Awards1
1. 200021_149433

BibTeX

@article{Fl_ry_2015, title={A WSe2/MoSe2 heterostructure photovoltaic device}, volume={107}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4931621}, DOI={10.1063/1.4931621}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Flöry, Nikolaus and Jain, Achint and Bharadwaj, Palash and Parzefall, Markus and Taniguchi, Takashi and Watanabe, Kenji and Novotny, Lukas}, year={2015}, month=sep }

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