DOI: 10.1063/1.4913714. Low-frequency noise in MoSe2 field effect transistors

Low-frequency noise in MoSe2 field effect transistors

10.1063/1.4913714

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

One of the important performance metrics of emerging nanoelectronic devices, including low dimensional Field Effect Transistors (FETs), is the magnitude of the low-frequency noise. Atomically thin 2D semiconductor channel materials such as MoX2 (X ≡ S, Se) have shown promising transistor characteristics such as ION/IOFF ratio exceeding 106 and low IOFF, making them attractive as channel materials for next generation nanoelectronic devices. However, MoS2 FETs demonstrated to date exhibit high noise levels under ambient conditions. In this letter, we report at least two orders of magnitude smaller values of Hooge parameter in a back-gated MoSe2 FET (10 atomic layers) with nickel S/D contacts and measured at atmospheric pressure and temperature. The channel dominated regime of noise was extracted from the total noise spectrum and is shown to follow a mobility fluctuation model with 1/f dependence. The low noise in MoSe2 FETs is comparable to other 1D nanoelectronic devices such as carbon nanotube FETs (CNT-FETs) and paves the way for use in future applications in precision sensing and communications.

Bibliography

Das, S. R., Kwon, J., Prakash, A., Delker, C. J., Das, S., & Janes, D. B. (2015). Low-frequency noise in MoSe2 field effect transistors. Applied Physics Letters, 106(8).

Authors 6

Suprem R. Das (first)
Jiseok Kwon (additional)
Abhijith Prakash (additional)
Collin J. Delker (additional)
Saptarshi Das (additional)
David B. Janes (additional)

References 30 Referenced 51

10.1038/nnano.2010.279 / Nat. Nanotechnol. (2011)
10.1038/ncomms2018 / Nat. Commun. (2012)
10.1063/1.4768218 / Appl. Phys. Lett. (2012)
10.1021/nn502362b / ACS Nano (2014)
10.1021/nl301702r / Nano Lett. (2012)
10.1021/nn406603h / ACS Nano (2014)
10.1103/PhysRevLett.105.136805 / Phys. Rev. Lett. (2010)
10.1021/nl302584w / Nano Lett. (2012)
10.1038/nnano.2013.277 / Nat. Nanotechnol. (2014)
10.1021/nn305275h / ACS Nano (2013)
10.1021/nl4010157 / Nano Lett. (2013)
10.1038/ncomms5875 / Nat. Commun. (2014)
10.1103/PhysRevLett.108.196802 / Phys. Rev. Lett. (2012)
10.1038/nnano.2014.148 / Nat. Nanotechnol. (2014)
10.1063/1.2206685 / Appl. Phys. Lett. (2006)
10.1063/1.4833567 / J. Appl. Phys. (2013)
10.1016/S0038-1101(98)00322-0 / Solid State Electron. (1999)
10.1109/LED.2010.2043637 / IEEE Electron Device Lett. (2010)
10.1063/1.3180707 / Appl. Phys. Lett. (2009)
10.1021/nn202749z / ACS Nano (2011)
10.1021/nl402150r / Nano Lett. (2013)
10.1021/nn4066473 / ACS Nano (2014)
10.1557/opl.2014.554 / MRS Proceedings (2014)
10.1063/1.4866785 / Appl. Phys. Lett. (2014)
10.1021/nn503287m / ACS Nano (2014)
10.1038/ncomms2498 / Nat. Commun. (2013)
10.1002/pssr.201307015 / Phys. Status Solidi (RRL) (2013)
10.1021/nl052528d / Nano Lett. (2006)
10.1109/TED.2012.2194150 / IEEE Trans. Electron Devices (2012)
10.1109/TED.2013.2274009 / IEEE Trans. Electron Devices (2013)

Dates

Type	When
Created	10 years, 6 months ago (Feb. 25, 2015, 1 p.m.)
Deposited	2 years ago (Aug. 8, 2023, 9:32 p.m.)
Indexed	7 hours, 41 minutes ago (Aug. 29, 2025, 6:41 a.m.)
Issued	10 years, 6 months ago (Feb. 23, 2015)
Published	10 years, 6 months ago (Feb. 23, 2015)
Published Online	10 years, 6 months ago (Feb. 25, 2015)
Published Print	10 years, 6 months ago (Feb. 23, 2015)

Funders 0

None

BibTeX

@article{Das_2015, title={Low-frequency noise in MoSe2 field effect transistors}, volume={106}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4913714}, DOI={10.1063/1.4913714}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Das, Suprem R. and Kwon, Jiseok and Prakash, Abhijith and Delker, Collin J. and Das, Saptarshi and Janes, David B.}, year={2015}, month=feb }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        29
      ]
    ],
    "date-time": "2025-08-29T10:41:31Z",
    "timestamp": 1756464091966,
    "version": "3.41.2"
  },
  "reference-count": 30,
  "publisher": "AIP Publishing",
  "issue": "8",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2015,
        2,
        23
      ]
    ]
  },
  "abstract": "<jats:p>One of the important performance metrics of emerging nanoelectronic devices, including low dimensional Field Effect Transistors (FETs), is the magnitude of the low-frequency noise. Atomically thin 2D semiconductor channel materials such as MoX2 (X \u2261 S, Se) have shown promising transistor characteristics such as ION/IOFF ratio exceeding 106 and low IOFF, making them attractive as channel materials for next generation nanoelectronic devices. However, MoS2 FETs demonstrated to date exhibit high noise levels under ambient conditions. In this letter, we report at least two orders of magnitude smaller values of Hooge parameter in a back-gated MoSe2 FET (10 atomic layers) with nickel S/D contacts and measured at atmospheric pressure and temperature. The channel dominated regime of noise was extracted from the total noise spectrum and is shown to follow a mobility fluctuation model with 1/f dependence. The low noise in MoSe2 FETs is comparable to other 1D nanoelectronic devices such as carbon nanotube FETs (CNT-FETs) and paves the way for use in future applications in precision sensing and communications.</jats:p>",
  "DOI": "10.1063/1.4913714",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2015,
        2,
        25
      ]
    ],
    "date-time": "2015-02-25T18:00:20Z",
    "timestamp": 1424887220000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 51,
  "title": "Low-frequency noise in MoSe2 field effect transistors",
  "prefix": "10.1063",
  "volume": "106",
  "author": [
    {
      "given": "Suprem R.",
      "family": "Das",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Purdue University 1 School of Electrical and Computer Engineering, , West Lafayette, Indiana 47907, USA"
        },
        {
          "name": "Purdue University 2 Birck Nanotechnology Center, , West Lafayette, Indiana 47907, USA"
        }
      ]
    },
    {
      "ORCID": "https://orcid.org/0000-0003-0145-658X",
      "authenticated-orcid": false,
      "given": "Jiseok",
      "family": "Kwon",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Purdue University 1 School of Electrical and Computer Engineering, , West Lafayette, Indiana 47907, USA"
        },
        {
          "name": "Purdue University 2 Birck Nanotechnology Center, , West Lafayette, Indiana 47907, USA"
        }
      ]
    },
    {
      "ORCID": "https://orcid.org/0000-0002-8169-677X",
      "authenticated-orcid": false,
      "given": "Abhijith",
      "family": "Prakash",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Purdue University 1 School of Electrical and Computer Engineering, , West Lafayette, Indiana 47907, USA"
        },
        {
          "name": "Purdue University 2 Birck Nanotechnology Center, , West Lafayette, Indiana 47907, USA"
        }
      ]
    },
    {
      "given": "Collin J.",
      "family": "Delker",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Center for Integrated Nanotechnologies 3 , Sandia National Laboratories, Albuquerque, New Mexico 87185, USA"
        }
      ]
    },
    {
      "given": "Saptarshi",
      "family": "Das",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Purdue University 2 Birck Nanotechnology Center, , West Lafayette, Indiana 47907, USA"
        },
        {
          "name": "Center for Nanoscale Materials 4 , Argonne National Laboratory, Lemont, Illinois 60439, USA"
        }
      ]
    },
    {
      "given": "David B.",
      "family": "Janes",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Purdue University 1 School of Electrical and Computer Engineering, , West Lafayette, Indiana 47907, USA"
        },
        {
          "name": "Purdue University 2 Birck Nanotechnology Center, , West Lafayette, Indiana 47907, USA"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2015,
        2,
        25
      ]
    ]
  },
  "reference": [
    {
      "key": "2023080901322939700_c1",
      "doi-asserted-by": "publisher",
      "first-page": "147",
      "DOI": "10.1038/nnano.2010.279",
      "volume": "6",
      "year": "2011",
      "journal-title": "Nat. Nanotechnol."
    },
    {
      "key": "2023080901322939700_c2",
      "doi-asserted-by": "publisher",
      "first-page": "1011",
      "DOI": "10.1038/ncomms2018",
      "volume": "3",
      "year": "2012",
      "journal-title": "Nat. Commun."
    },
    {
      "key": "2023080901322939700_c3",
      "doi-asserted-by": "publisher",
      "first-page": "223104",
      "DOI": "10.1063/1.4768218",
      "volume": "101",
      "year": "2012",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023080901322939700_c4",
      "doi-asserted-by": "publisher",
      "first-page": "8174",
      "DOI": "10.1021/nn502362b",
      "volume": "8",
      "year": "2014",
      "journal-title": "ACS Nano"
    },
    {
      "key": "2023080901322939700_c5",
      "doi-asserted-by": "publisher",
      "first-page": "3788",
      "DOI": "10.1021/nl301702r",
      "volume": "12",
      "year": "2012",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023080901322939700_c6",
      "doi-asserted-by": "publisher",
      "first-page": "1681",
      "DOI": "10.1021/nn406603h",
      "volume": "8",
      "year": "2014",
      "journal-title": "ACS Nano"
    },
    {
      "key": "2023080901322939700_c7",
      "doi-asserted-by": "publisher",
      "first-page": "136805",
      "DOI": "10.1103/PhysRevLett.105.136805",
      "volume": "105",
      "year": "2010",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2023080901322939700_c8a",
      "doi-asserted-by": "publisher",
      "first-page": "5576",
      "DOI": "10.1021/nl302584w",
      "volume": "12",
      "year": "2012",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023080901322939700_c8b",
      "doi-asserted-by": "publisher",
      "first-page": "111",
      "DOI": "10.1038/nnano.2013.277",
      "volume": "9",
      "year": "2014",
      "journal-title": "Nat. Nanotechnol."
    },
    {
      "key": "2023080901322939700_c9",
      "doi-asserted-by": "publisher",
      "first-page": "791",
      "DOI": "10.1021/nn305275h",
      "volume": "7",
      "year": "2013",
      "journal-title": "ACS Nano"
    },
    {
      "key": "2023080901322939700_c10",
      "doi-asserted-by": "publisher",
      "first-page": "3106",
      "DOI": "10.1021/nl4010157",
      "volume": "13",
      "year": "2013",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023080901322939700_c11",
      "doi-asserted-by": "publisher",
      "first-page": "4875",
      "DOI": "10.1038/ncomms5875",
      "volume": "5",
      "year": "2014",
      "journal-title": "Nat. Commun."
    },
    {
      "key": "2023080901322939700_c12",
      "doi-asserted-by": "publisher",
      "first-page": "196802",
      "DOI": "10.1103/PhysRevLett.108.196802",
      "volume": "108",
      "year": "2012",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2023080901322939700_c13",
      "doi-asserted-by": "publisher",
      "first-page": "611",
      "DOI": "10.1038/nnano.2014.148",
      "volume": "9",
      "year": "2014",
      "journal-title": "Nat. Nanotechnol."
    },
    {
      "key": "2023080901322939700_c14",
      "doi-asserted-by": "publisher",
      "first-page": "203116",
      "DOI": "10.1063/1.2206685",
      "volume": "88",
      "year": "2006",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023080901322939700_c15a",
      "doi-asserted-by": "publisher",
      "first-page": "203704",
      "DOI": "10.1063/1.4833567",
      "volume": "114",
      "year": "2013",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023080901322939700_c15b",
      "doi-asserted-by": "publisher",
      "first-page": "865",
      "DOI": "10.1016/S0038-1101(98)00322-0",
      "volume": "43",
      "year": "1999",
      "journal-title": "Solid State Electron."
    },
    {
      "key": "2023080901322939700_c16",
      "doi-asserted-by": "publisher",
      "first-page": "428",
      "DOI": "10.1109/LED.2010.2043637",
      "volume": "31",
      "year": "2010",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2023080901322939700_c17a",
      "doi-asserted-by": "publisher",
      "first-page": "033103",
      "DOI": "10.1063/1.3180707",
      "volume": "95",
      "year": "2009",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023080901322939700_c17b",
      "doi-asserted-by": "publisher",
      "first-page": "8124",
      "DOI": "10.1021/nn202749z",
      "volume": "5",
      "year": "2011",
      "journal-title": "ACS Nano"
    },
    {
      "key": "2023080901322939700_c18",
      "doi-asserted-by": "publisher",
      "first-page": "4351",
      "DOI": "10.1021/nl402150r",
      "volume": "13",
      "year": "2013",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023080901322939700_c19a",
      "doi-asserted-by": "publisher",
      "first-page": "5633",
      "DOI": "10.1021/nn4066473",
      "volume": "8",
      "year": "2014",
      "journal-title": "ACS Nano"
    },
    {
      "key": "2023080901322939700_c19b",
      "doi-asserted-by": "publisher",
      "first-page": "mrss14-1701-nn05-06",
      "DOI": "10.1557/opl.2014.554",
      "volume": "1701",
      "year": "2014",
      "journal-title": "MRS Proceedings"
    },
    {
      "key": "2023080901322939700_c20",
      "doi-asserted-by": "publisher",
      "first-page": "083110",
      "DOI": "10.1063/1.4866785",
      "volume": "104",
      "year": "2014",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023080901322939700_c21",
      "doi-asserted-by": "publisher",
      "first-page": "8582",
      "DOI": "10.1021/nn503287m",
      "volume": "8",
      "year": "2014",
      "journal-title": "ACS Nano"
    },
    {
      "key": "2023080901322939700_c22",
      "doi-asserted-by": "publisher",
      "first-page": "1474",
      "DOI": "10.1038/ncomms2498",
      "volume": "4",
      "year": "2013",
      "journal-title": "Nat. Commun."
    },
    {
      "key": "2023080901322939700_c23",
      "doi-asserted-by": "publisher",
      "first-page": "268",
      "DOI": "10.1002/pssr.201307015",
      "volume": "7",
      "year": "2013",
      "journal-title": "Phys. Status Solidi (RRL)"
    },
    {
      "key": "2023080901322939700_c24",
      "doi-asserted-by": "publisher",
      "first-page": "930",
      "DOI": "10.1021/nl052528d",
      "volume": "6",
      "year": "2006",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023080901322939700_c25",
      "doi-asserted-by": "publisher",
      "first-page": "1980",
      "DOI": "10.1109/TED.2012.2194150",
      "volume": "59",
      "year": "2012",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2023080901322939700_c26",
      "doi-asserted-by": "publisher",
      "first-page": "2900",
      "DOI": "10.1109/TED.2013.2274009",
      "volume": "60",
      "year": "2013",
      "journal-title": "IEEE Trans. Electron Devices"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4913714/13595511/083507_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4913714/13595511/083507_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        8,
        9
      ]
    ],
    "date-time": "2023-08-09T01:32:45Z",
    "timestamp": 1691544765000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/106/8/083507/1078219/Low-frequency-noise-in-MoSe2-field-effect"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2015,
        2,
        23
      ]
    ]
  },
  "references-count": 30,
  "journal-issue": {
    "issue": "8",
    "published-print": {
      "date-parts": [
        [
          2015,
          2,
          23
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.4913714",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2015,
        2,
        23
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2015,
        2,
        23
      ]
    ]
  },
  "article-number": "083507"
}