Abstract
Ferroelectric/ferroelastic domain reorientation was measured in a 1.9 μm thick tetragonal {001} oriented PbZr0.3Ti0.7O3 thin film doped with 1% Mn under different mechanical boundary constraints. Domain reorientation was quantified through the intensity changes in the 002/200 Bragg reflections as a function of applied electric field. To alter the degree of clamping, films were undercut from the underlying substrate by 0%, ∼25%, ∼50%, or ∼75% of the electrode area. As the amount of declamping from the substrate increased from 0% to ∼75%, the degree of ferroelectric/ferroelastic domain reorientation in the films increased more than six fold at three times the coercive field. In a film that was ∼75% released from the substrate, approximately 26% of 90° domains were reoriented under the maximum applied field; this value for domain reorientation compares favorably to bulk ceramics of similar compositions. An estimate for the upper limit of 90° domain reorientation in a fully released film under these conditions was determined to be 32%. It was also found that the different clamping conditions strongly influence the amount of reorientation upon removing the applied field, with higher remanence of preferred domain orientations observed in declamped films.
Bibliography
Wallace, M., Johnson-Wilke, R. L., Esteves, G., Fancher, C. M., Wilke, R. H. T., Jones, J. L., & Trolier-McKinstry, S. (2015). In situ measurement of increased ferroelectric/ferroelastic domain wall motion in declamped tetragonal lead zirconate titanate thin films. Journal of Applied Physics, 117(5).
Authors
7
- M. Wallace (first)
- R. L. Johnson-Wilke (additional)
- G. Esteves (additional)
- C. M. Fancher (additional)
- R. H. T. Wilke (additional)
- J. L. Jones (additional)
- S. Trolier-McKinstry (additional)
References
39
Referenced
40
10.1111/j.1551-2916.2012.05155.x
/ J. Am. Ceram. Soc. / PZT-based piezoelectric MEMS technology (2012)10.1557/mrs2009.177
/ MRS Bull. / Piezoelectric thin films for sensors, actuators, and energy harvesting (2009)10.1063/1.1325005
/ J. Appl. Phys. / Domain wall motion and its contribution to the dielectric and piezoelectric properties of lead zirconate titanate films (2001)10.1103/PhysRevLett.108.157604
/ Phys. Rev. Lett. / Substrate clamping effects on irreversible domain wall dynamics in lead zirconate titanate thin films (2012)10.1063/1.370771
/ J. Appl. Phys. / Longitudinal piezoelectric coefficient measurement for bulk ceramics and thin films using pneumatic pressure rig (1999)10.1063/1.2338756
/ Appl. Phys. Lett. / Direct measurement of the domain switching contribution to the dynamic piezoelectric response in ferroelectric ceramics (2006)10.1557/PROC-361-111
/ Mater. Res. Soc. Symp. Proc. / A study of switching behavior in Pb(Zr, Ti)O3 thin films using X-ray diffraction (1994)10.1007/s10832-007-9001-1
/ J. Electroceram. / Domain wall contributions to the properties of piezoelectric thin films (2007)10.1063/1.3284945
/ J. Appl. Phys. / Grain size dependence of properties in lead nickel niobate-lead zirconate titanate films (2010)10.1023/B:JECR.0000033998.72845.51
/ J. Electroceram. / Thin film piezoelectrics for MEMS (2004)10.1063/1.347616
/ J. Appl. Phys. / The extrinsic nature of nonlinear behavior observed in lead zirconate titanate ferroelectric ceramic (1991)10.1063/1.2203750
/ Appl. Phys. Lett. / Piezoelectric nonlinearity due to motion of 180° domain walls in ferroelectric materials at subcoercive fields: A dynamic poling model (2006)10.1002/adfm.201100445
/ Adv. Funct. Mater. / Mobile ferroelastic domain walls in nanocrystalline PZT film: The direct piezoelectric effect (2011)10.1080/00150190008008789
/ Ferroelectrics / Non-linear piezoelectric response in lead zirconate-titanate (PZT) films (2000)10.1063/1.117220
/ Appl. Phys. Lett. / Piezoelectric properties of Ca-modified PbTiO3 thin films (1996)10.1063/1.1406981
/ Appl. Phys. Lett. / In situ observation of ferroelectric 90°-domain switching in epitaxial Pb(Zr, Ti)O3 thin films by synchrotron x-ray diffraction (2001)10.1063/1.121554
/ Appl. Phys. Lett. / Removal of 90° domain pinning in (100) Pb(Zr0.15Ti0.85)O3 thin films by pulsed operation (1998)10.1063/1.1475369
/ Appl. Phys. Lett. / Size effect in mesoscopic epitaxial ferroelectric structures: Increase of piezoelectric response with decreasing feature size (2002)10.1063/1.1516857
/ Appl. Phys. Lett. / Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si (2002)10.1016/j.actamat.2010.06.004
/ Acta Mater. / Ferroelastic domain wall dynamics in ferroelectric bilayers (2010)10.1063/1.1823033
/ Appl. Phys. Lett. / Two-dimensional planar size effects in epitaxial PbTiO3 thin films (2004)10.1143/APEX.2.041401
/ Appl. Phys. Express / Impact of 90°-domain wall motion in Pb(Zr0.43Ti0.57)O3 film on the ferroelectricity induced by an applied electric field (2009)10.1063/1.3073823
/ J. Appl. Phys. / Crystal structure and electrical property comparisons of epitaxial Pb(Zr, Ti)O3 thick films grown on (100)CaF2 and (100)SrTiO3 substrates (2009){'key': '2023070519380611100_c24', 'first-page': '344', 'article-title': 'Chemically prepared Pb(Zr, Ti)O3 thin films: The effects of orientation and stress'}
/ Chemically prepared Pb(Zr, Ti)O3 thin films: The effects of orientation and stress10.1109/TUFFC.2014.006562
/ IEEE Trans. Ultrason. Ferroelectr. Freq. Control / Ferroelectric/Ferroelastic domain wall motion in dense and porous tetragonal lead zirconate titanate films (2015)10.1016/S0924-4247(98)00161-7
/ Sens. Actuators, A / The wafer flexure technique for the determination of the transverse piezoelectric coefficient (d31) of PZT thin films (1998)10.1063/1.1849821
/ J. Appl. Phys. / Domain texture distributions in tetragonal lead zirconate titanate by x-ray and neutron diffraction (2005)10.1557/JMR.2001.0317
/ J. Mater. Res. / Modeling of electric field induced texture in lead zirconate titanate ceramics (2001)10.1016/S0924-4247(03)00090-6
/ Sens. Actuators, A / {100}-textured, piezoelectric Pb(Zrx, Ti1−x)O3 thin films for MEMS: Integration, deposition, and properties (2003)10.1109/58.4153
/ IEEE Trans. Ultrason. Ferroelectr. Freq. Control / Thin-film ferroelectrics of PZT by sol-gel processing (1988)10.1088/0022-3727/41/19/195407
/ J. Phys. D: Appl. Phys. / Strain state, microstructure and electrical transport properties of LaNiO3 films grown on Si substrates (2008)10.1063/1.125629
/ Appl. Phys. Lett. / Recovery of forming gas damaged Pb(Nb, Zr, Ti)O3 capacitors (2000)- A. P. Hammersley, FIT2D: An Introduction and Overview, ESRF internal report, ESRF97HA02T (1997).
10.1088/0022-3727/39/24/029
/ J. Phys. D: Appl. Phys. / Characterization of domain structures from diffraction profiles in tetragonal ferroelastic ceramics (2006)10.1016/0304-3991(92)90037-K
/ Ultramicroscopy / High-Resolution electron microscopy of 90° ferroelectric domain boundaries in BaTiO3 and Pb(Zr0.52Ti0.48)O3 (1992)10.1126/science.1200605
/ Science / Direct observation of continuous electric dipole rotation in flux-closure domains in ferroelectric Pb(Zr, Ti)O3 (2011)10.4028/www.scientific.net/SSP.105.379
/ Solid State Phenom. / Quantifying domain textures in lead zirconate titanate using 022:202 and 220 diffraction peaks (2005){'key': '2023070519380611100_c38'}
10.1063/1.3669527
/ Appl. Phys. Lett. / Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52, Ti0.48)O3 thin films (2011)
Dates
Type | When |
---|---|
Created | 10 years, 6 months ago (Feb. 6, 2015, 1 p.m.) |
Deposited | 2 years, 1 month ago (July 5, 2023, 7:24 p.m.) |
Indexed | 1 month ago (July 30, 2025, 7:02 a.m.) |
Issued | 10 years, 6 months ago (Feb. 6, 2015) |
Published | 10 years, 6 months ago (Feb. 6, 2015) |
Published Online | 10 years, 6 months ago (Feb. 6, 2015) |
Published Print | 10 years, 6 months ago (Feb. 7, 2015) |
Funders
3
National Science Foundation
10.13039/100000001
Region: Americas
gov (National government)
Labels
4
- U.S. National Science Foundation
- NSF
- US NSF
- USA NSF
Awards
2
- DMR-1410907
- DMR-1409399
U.S. Department of Energy
10.13039/100000015
Region: Americas
gov (National government)
Labels
8
- Energy Department
- Department of Energy
- United States Department of Energy
- ENERGY.GOV
- US Department of Energy
- USDOE
- DOE
- USADOE
Awards
1
- DE-AC02- 06CH11357
Army Research Office
10.13039/100000183
Region: Americas
gov (National government)
Labels
5
- U.S. Army Research Office
- United States Army Research Office
- U.S. Army Research Laboratory's Army Research Office
- ARL's Army Research Office
- ARO
Awards
1
- W911NF-09-1-0435
@article{Wallace_2015, title={In situ measurement of increased ferroelectric/ferroelastic domain wall motion in declamped tetragonal lead zirconate titanate thin films}, volume={117}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.4907394}, DOI={10.1063/1.4907394}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Wallace, M. and Johnson-Wilke, R. L. and Esteves, G. and Fancher, C. M. and Wilke, R. H. T. and Jones, J. L. and Trolier-McKinstry, S.}, year={2015}, month=feb }