DOI: 10.1063/1.4906060. Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy

Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy

10.1063/1.4906060

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Here, we report on the electrical characterization of phase change memory cells containing a Ge3Sb2Te6 (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

Bibliography

Boschker, J. E., Boniardi, M., Redaelli, A., Riechert, H., & Calarco, R. (2015). Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy. Applied Physics Letters, 106(2).

Authors 5

Jos E. Boschker (first)
Mattia Boniardi (additional)
Andrea Redaelli (additional)
Henning Riechert (additional)
Raffaella Calarco (additional)

References 20 Referenced 19

10.1021/cr900040x / Chem. Rev. (2010)
10.1038/nmat2009 / Nat. Mater. (2007)
10.1116/1.3301579 / J. Vac. Sci. Technol. B (2010)
10.1109/TDMR.2004.836724 / IEEE Trans. Device Mater. Reliab. (2004)
10.1016/j.mee.2008.09.014 / Microelectron. Eng. (2008)
10.1021/cm300539a / Chem. Mater. (2012)
10.1038/nnano.2011.96 / Nat. Nanotechnol. (2011)
10.1002/pssr.201206387 / Phys. Status Solidi-Rapid Res. Lett. (2012)
10.1063/1.4742919 / Appl. Phys. Lett. (2012)
10.1063/1.4847715 / Appl. Phys. Lett. (2013)
10.1021/cg200857x / Cryst. Growth Des. (2011)
10.1002/pssb.201350138 / Phys. Status Solidi (2014)
10.1016/j.jcrysgro.2014.03.039 / J. Cryst. Growth (2014)
10.1109/TED.2006.888752 / IEEE Trans. Electron Devices (2007)
10.1109/IEDM.2009.5424409 / IEEE Int. Electron Devices Meet.
10.1016/j.sse.2010.11.033 / Solid. State. Electron. (2011)
10.1109/LED.2007.910749 / IEEE Electron Device Lett. (2008)
10.1063/1.3094916 / Appl. Phys. Lett. (2009)
10.1109/TED.2009.2016397 / IEEE Trans. Electron Devices (2009)
10.1063/1.3599559 / Appl. Phys. Lett. (2011)

Dates

Type	When
Created	10 years, 7 months ago (Jan. 15, 2015, 1 p.m.)
Deposited	2 years, 2 months ago (June 17, 2023, 4:23 p.m.)
Indexed	1 month ago (July 30, 2025, 7:05 a.m.)
Issued	10 years, 7 months ago (Jan. 12, 2015)
Published	10 years, 7 months ago (Jan. 12, 2015)
Published Online	10 years, 7 months ago (Jan. 15, 2015)
Published Print	10 years, 7 months ago (Jan. 12, 2015)

Funders 1

European Commission 10.13039/501100000780
Region: Europe
gov (National government)
Labels26
1. European Union
2. Comisión Europea
3. Europäische Kommission
4. EU-Kommissionen
5. Euroopa Komisjoni
6. Ευρωπαϊκής Επιτροπής
7. Европейската комисия
8. Evropské komise
9. Commission européenne
10. Choimisiúin Eorpaigh
11. Europskoj komisiji
12. Commissione europea
13. La Commissione europea
14. Eiropas Komisiju
15. Europos Komisijos
16. Európai Bizottságról
17. Europese Commissie
18. Komisja Europejska
19. Comissão Europeia
20. Comisia Europeană
21. Európskej komisii
22. Evropski komisiji
23. Euroopan komission
24. Europeiska kommissionen
25. EC
26. EU
Awards1
1. GA 317746

BibTeX

@article{Boschker_2015, title={Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy}, volume={106}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4906060}, DOI={10.1063/1.4906060}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Boschker, Jos E. and Boniardi, Mattia and Redaelli, Andrea and Riechert, Henning and Calarco, Raffaella}, year={2015}, month=jan }

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