DOI: 10.1063/1.4905634. Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer

Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer

10.1063/1.4905634

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al2O3 onto exfoliated molybdenum disulfide (MoS2) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS2 by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al2O3. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al2O3/MoS2 interface, but also leaves MoS2 intact.

Bibliography

Son, S., Yu, S., Choi, M., Kim, D., & Choi, C. (2015). Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer. Applied Physics Letters, 106(2).

Authors 5

Seokki Son (first)
Sunmoon Yu (additional)
Moonseok Choi (additional)
Dohyung Kim (additional)
Changhwan Choi (additional)

References 34 Referenced 39

10.1063/1.2407388 / J. Appl. Phys. (2007)
10.1088/0034-4885/74/8/082501 / Rep. Prog. Phys. (2011)
10.1166/mex.2011.1002 / Mater. Express (2011)
10.1021/nn401429w / ACS Nano (2013)
10.1038/nchem.1589 / Nat. Chem. (2013)
10.1038/nnano.2012.193 / Nat. Nanotechnol. (2012)
10.1039/c3ee42591f / Energy Environ. Sci. (2014)
10.1063/1.4753797 / Appl. Phys. Lett. (2012)
10.1038/nnano.2010.279 / Nat. Nanotechnol. (2011)
10.1038/ncomms2018 / Nat. Commun. (2012)
10.1039/c2cs35387c / Chem. Soc. Rev. (2013)
10.1103/PhysRevLett.98.136805 / Phys. Rev. Lett. (2007)
10.1063/1.3703595 / Appl. Phys. Lett. (2012)
10.1021/nn404775u / ACS Nano (2013)
10.1021/am303261c / ACS Appl. Mater. Interfaces (2013)
10.1063/1.4869149 / Appl. Phys. Lett. (2014)
10.1063/1.3077021 / Appl. Phys. Lett. (2009)
10.1063/1.3238560 / Appl. Phys. Lett. (2009)
10.1021/nn1003138 / ACS Nano (2010)
10.1002/adma.201402008 / Adv. Mater. (2014)
10.1021/cm0304546 / Chem. Mater. (2004)
10.1109/LED.2012.2184520 / IEEE Electron. Device Lett. (2012)
10.1021/cr900056b / Chem. Rev. (2009)
10.1103/PhysRevX.4.011043 / Phys. Rev. X (2014)
10.1073/pnas.0502848102 / Proc. Natl. Acad. Sci. U.S.A. (2005)
10.1002/adfm.201102111 / Adv. Funct. Mater. (2012)
10.1109/TSMC.1979.4310076 / IEEE Trans. Syst. Man Cybern. (1979)
10.1103/PhysRevB.46.7157 / Phys. Rev. B (1992)
10.1021/nl501106v / Nano Lett. (2014)
10.1007/s10853-014-8370-5 / J. Mater. Sci. (2014)
10.1016/j.physe.2012.07.029 / Phys. E (2014)
10.1039/c3cp55443k / Phys. Chem. Chem. Phys. (2014)
10.1038/srep05649 / Sci. Rep. (2014)
10.1016/j.patrec.2006.03.009 / Pattern Recogn. Lett. (2006)

Dates

Type	When
Created	10 years, 7 months ago (Jan. 12, 2015, 2:44 p.m.)
Deposited	2 years, 2 months ago (June 17, 2023, 4:21 p.m.)
Indexed	3 weeks, 6 days ago (July 30, 2025, 7:04 a.m.)
Issued	10 years, 7 months ago (Jan. 12, 2015)
Published	10 years, 7 months ago (Jan. 12, 2015)
Published Online	10 years, 7 months ago (Jan. 12, 2015)
Published Print	10 years, 7 months ago (Jan. 12, 2015)

Funders 1

IT R&D Program of MKE/KEIT
Awards1
1. 10039174

BibTeX

@article{Son_2015, title={Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer}, volume={106}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.4905634}, DOI={10.1063/1.4905634}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Son, Seokki and Yu, Sunmoon and Choi, Moonseok and Kim, Dohyung and Choi, Changhwan}, year={2015}, month=jan }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T11:04:53Z",
    "timestamp": 1753873493734,
    "version": "3.41.2"
  },
  "reference-count": 34,
  "publisher": "AIP Publishing",
  "issue": "2",
  "funder": [
    {
      "name": "IT R&D Program of MKE/KEIT",
      "award": [
        "10039174"
      ]
    }
  ],
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2015,
        1,
        12
      ]
    ]
  },
  "abstract": "<jats:p>We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al2O3 onto exfoliated molybdenum disulfide (MoS2) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS2 by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al2O3. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al2O3/MoS2 interface, but also leaves MoS2 intact.</jats:p>",
  "DOI": "10.1063/1.4905634",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2015,
        1,
        12
      ]
    ],
    "date-time": "2015-01-12T19:44:55Z",
    "timestamp": 1421091895000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 39,
  "title": "Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer",
  "prefix": "10.1063",
  "volume": "106",
  "author": [
    {
      "given": "Seokki",
      "family": "Son",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Hanyang University 1 Division of Materials Science and Engineering, , Seoul 133-791, South Korea"
        }
      ]
    },
    {
      "given": "Sunmoon",
      "family": "Yu",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Korea Advanced Institute of Science and Technology 2 Department of Materials Science and Engineering, , Daejeon 305-701, South Korea"
        }
      ]
    },
    {
      "given": "Moonseok",
      "family": "Choi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Hanyang University 1 Division of Materials Science and Engineering, , Seoul 133-791, South Korea"
        }
      ]
    },
    {
      "given": "Dohyung",
      "family": "Kim",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Hanyang University 1 Division of Materials Science and Engineering, , Seoul 133-791, South Korea"
        }
      ]
    },
    {
      "given": "Changhwan",
      "family": "Choi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Hanyang University 1 Division of Materials Science and Engineering, , Seoul 133-791, South Korea"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2015,
        1,
        12
      ]
    ]
  },
  "reference": [
    {
      "issue": "1",
      "key": "2023061720213347000_c1",
      "doi-asserted-by": "publisher",
      "first-page": "014507",
      "DOI": "10.1063/1.2407388",
      "volume": "101",
      "year": "2007",
      "journal-title": "J. Appl. Phys."
    },
    {
      "issue": "8",
      "key": "2023061720213347000_c2",
      "doi-asserted-by": "publisher",
      "first-page": "082501",
      "DOI": "10.1088/0034-4885/74/8/082501",
      "volume": "74",
      "year": "2011",
      "journal-title": "Rep. Prog. Phys."
    },
    {
      "issue": "1",
      "key": "2023061720213347000_c3",
      "doi-asserted-by": "publisher",
      "first-page": "10",
      "DOI": "10.1166/mex.2011.1002",
      "volume": "1",
      "year": "2011",
      "journal-title": "Mater. Express"
    },
    {
      "issue": "6",
      "key": "2023061720213347000_c4",
      "doi-asserted-by": "publisher",
      "first-page": "5446",
      "DOI": "10.1021/nn401429w",
      "volume": "7",
      "year": "2013",
      "journal-title": "ACS Nano"
    },
    {
      "issue": "4",
      "key": "2023061720213347000_c5",
      "doi-asserted-by": "publisher",
      "first-page": "263",
      "DOI": "10.1038/nchem.1589",
      "volume": "5",
      "year": "2013",
      "journal-title": "Nat. Chem."
    },
    {
      "issue": "11",
      "key": "2023061720213347000_c6",
      "doi-asserted-by": "publisher",
      "first-page": "699",
      "DOI": "10.1038/nnano.2012.193",
      "volume": "7",
      "year": "2012",
      "journal-title": "Nat. Nanotechnol."
    },
    {
      "issue": "1",
      "key": "2023061720213347000_c7",
      "doi-asserted-by": "publisher",
      "first-page": "209",
      "DOI": "10.1039/c3ee42591f",
      "volume": "7",
      "year": "2014",
      "journal-title": "Energy Environ. Sci."
    },
    {
      "issue": "12",
      "key": "2023061720213347000_c8",
      "doi-asserted-by": "publisher",
      "first-page": "123105",
      "DOI": "10.1063/1.4753797",
      "volume": "101",
      "year": "2012",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "issue": "3",
      "key": "2023061720213347000_c9",
      "doi-asserted-by": "publisher",
      "first-page": "147",
      "DOI": "10.1038/nnano.2010.279",
      "volume": "6",
      "year": "2011",
      "journal-title": "Nat. Nanotechnol."
    },
    {
      "key": "2023061720213347000_c10",
      "doi-asserted-by": "publisher",
      "first-page": "1011",
      "DOI": "10.1038/ncomms2018",
      "volume": "3",
      "year": "2012",
      "journal-title": "Nat. Commun."
    },
    {
      "issue": "5",
      "key": "2023061720213347000_c11",
      "doi-asserted-by": "publisher",
      "first-page": "1934",
      "DOI": "10.1039/c2cs35387c",
      "volume": "42",
      "year": "2013",
      "journal-title": "Chem. Soc. Rev."
    },
    {
      "issue": "13",
      "key": "2023061720213347000_c12",
      "doi-asserted-by": "publisher",
      "first-page": "136805",
      "DOI": "10.1103/PhysRevLett.98.136805",
      "volume": "98",
      "year": "2007",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "issue": "15",
      "key": "2023061720213347000_c13",
      "doi-asserted-by": "publisher",
      "first-page": "152115",
      "DOI": "10.1063/1.3703595",
      "volume": "100",
      "year": "2012",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "issue": "11",
      "key": "2023061720213347000_c14",
      "doi-asserted-by": "publisher",
      "first-page": "10354",
      "DOI": "10.1021/nn404775u",
      "volume": "7",
      "year": "2013",
      "journal-title": "ACS Nano"
    },
    {
      "issue": "11",
      "key": "2023061720213347000_c15",
      "doi-asserted-by": "publisher",
      "first-page": "4739",
      "DOI": "10.1021/am303261c",
      "volume": "5",
      "year": "2013",
      "journal-title": "ACS Appl. Mater. Interfaces"
    },
    {
      "issue": "11",
      "key": "2023061720213347000_c16",
      "doi-asserted-by": "publisher",
      "first-page": "111601",
      "DOI": "10.1063/1.4869149",
      "volume": "104",
      "year": "2014",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "issue": "6",
      "key": "2023061720213347000_c17",
      "doi-asserted-by": "publisher",
      "first-page": "062107",
      "DOI": "10.1063/1.3077021",
      "volume": "94",
      "year": "2009",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "issue": "13",
      "key": "2023061720213347000_c18",
      "doi-asserted-by": "publisher",
      "first-page": "133106",
      "DOI": "10.1063/1.3238560",
      "volume": "95",
      "year": "2009",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "issue": "5",
      "key": "2023061720213347000_c19",
      "doi-asserted-by": "publisher",
      "first-page": "2667",
      "DOI": "10.1021/nn1003138",
      "volume": "4",
      "year": "2010",
      "journal-title": "ACS Nano"
    },
    {
      "issue": "36",
      "key": "2023061720213347000_c20",
      "doi-asserted-by": "publisher",
      "first-page": "6255",
      "DOI": "10.1002/adma.201402008",
      "volume": "26",
      "year": "2014",
      "journal-title": "Adv. Mater."
    },
    {
      "issue": "4",
      "key": "2023061720213347000_c21",
      "doi-asserted-by": "publisher",
      "first-page": "639",
      "DOI": "10.1021/cm0304546",
      "volume": "16",
      "year": "2004",
      "journal-title": "Chem. Mater."
    },
    {
      "issue": "4",
      "key": "2023061720213347000_c22",
      "doi-asserted-by": "publisher",
      "first-page": "546",
      "DOI": "10.1109/LED.2012.2184520",
      "volume": "33",
      "year": "2012",
      "journal-title": "IEEE Electron. Device Lett."
    },
    {
      "issue": "1",
      "key": "2023061720213347000_c23",
      "doi-asserted-by": "publisher",
      "first-page": "111",
      "DOI": "10.1021/cr900056b",
      "volume": "110",
      "year": "2009",
      "journal-title": "Chem. Rev."
    },
    {
      "key": "2023061720213347000_c24",
      "doi-asserted-by": "publisher",
      "first-page": "011043",
      "DOI": "10.1103/PhysRevX.4.011043",
      "volume": "4",
      "year": "2014",
      "journal-title": "Phys. Rev. X"
    },
    {
      "issue": "30",
      "key": "2023061720213347000_c25",
      "doi-asserted-by": "publisher",
      "first-page": "10451",
      "DOI": "10.1073/pnas.0502848102",
      "volume": "102",
      "year": "2005",
      "journal-title": "Proc. Natl. Acad. Sci. U.S.A."
    },
    {
      "issue": "7",
      "key": "2023061720213347000_c26",
      "doi-asserted-by": "publisher",
      "first-page": "1385",
      "DOI": "10.1002/adfm.201102111",
      "volume": "22",
      "year": "2012",
      "journal-title": "Adv. Funct. Mater."
    },
    {
      "issue": "1",
      "key": "2023061720213347000_c27",
      "doi-asserted-by": "publisher",
      "first-page": "62",
      "DOI": "10.1109/TSMC.1979.4310076",
      "volume": "9",
      "year": "1979",
      "journal-title": "IEEE Trans. Syst. Man Cybern."
    },
    {
      "issue": "11",
      "key": "2023061720213347000_c28",
      "doi-asserted-by": "publisher",
      "first-page": "7157",
      "DOI": "10.1103/PhysRevB.46.7157",
      "volume": "46",
      "year": "1992",
      "journal-title": "Phys. Rev. B"
    },
    {
      "issue": "8",
      "key": "2023061720213347000_c29",
      "doi-asserted-by": "publisher",
      "first-page": "4314",
      "DOI": "10.1021/nl501106v",
      "volume": "14",
      "year": "2014",
      "journal-title": "Nano Lett."
    },
    {
      "issue": "19",
      "key": "2023061720213347000_c30",
      "doi-asserted-by": "publisher",
      "first-page": "6762",
      "DOI": "10.1007/s10853-014-8370-5",
      "volume": "49",
      "year": "2014",
      "journal-title": "J. Mater. Sci."
    },
    {
      "key": "2023061720213347000_c31",
      "doi-asserted-by": "publisher",
      "first-page": "416",
      "DOI": "10.1016/j.physe.2012.07.029",
      "volume": "56",
      "year": "2014",
      "journal-title": "Phys. E"
    },
    {
      "issue": "23",
      "key": "2023061720213347000_c32",
      "doi-asserted-by": "publisher",
      "first-page": "11124",
      "DOI": "10.1039/c3cp55443k",
      "volume": "16",
      "year": "2014",
      "journal-title": "Phys. Chem. Chem. Phys."
    },
    {
      "key": "2023061720213347000_c33",
      "doi-asserted-by": "publisher",
      "first-page": "5649",
      "DOI": "10.1038/srep05649",
      "volume": "4",
      "year": "2014",
      "journal-title": "Sci. Rep."
    },
    {
      "issue": "14",
      "key": "2023061720213347000_c34",
      "doi-asserted-by": "publisher",
      "first-page": "1644",
      "DOI": "10.1016/j.patrec.2006.03.009",
      "volume": "27",
      "year": "2006",
      "journal-title": "Pattern Recogn. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4905634/14088426/021601_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4905634/14088426/021601_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        6,
        17
      ]
    ],
    "date-time": "2023-06-17T20:21:42Z",
    "timestamp": 1687033302000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/106/2/021601/29743/Improved-high-temperature-integration-of-Al2O3-on"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2015,
        1,
        12
      ]
    ]
  },
  "references-count": 34,
  "journal-issue": {
    "issue": "2",
    "published-print": {
      "date-parts": [
        [
          2015,
          1,
          12
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.4905634",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2015,
        1,
        12
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2015,
        1,
        12
      ]
    ]
  },
  "article-number": "021601"
}